Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-16T01:20:30.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Monte Carlo Simulations Of Elastic Scattering With Applications To Dc And High Power Pulsed Magnetron Sputtering For Ti3SIC2

Published online by Cambridge University Press:  20 August 2015

Jürgen Geiser  and
Sven Blankenburg
Jürgen Geiser*
Affiliation:
Department of Mathematics, Humboldt-Universität zu Berlin, D-10099 Berlin, Germany
Sven Blankenburg*
Affiliation:
Department of Physics, Humboldt-Universität zu Berlin, D-10099 Berlin, Germany
*
Corresponding author.Email:[email protected]
Email:[email protected]
Get access

Abstract

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and tar-get collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS.

Keywords

80M3160J2065N7465C0565C3565C40DC sputteringMAX-phasesmean free pathparticle in cell Monte Carlo collisionsMonte Carlo Markov chain
Type
Research Article
Information
Communications in Computational Physics , Volume 11 , Issue 5 , May 2012 , pp. 1618 - 1642
Copyright
Copyright © Global Science Press Limited 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Alami, J., Eklund, P., Emmerlich, J., Wilhelmsson, O., Jansson, U., Hogberg, H., Hultman, L., and Helmersson, U., High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target, Thin Solid Films 515 (2006), 1731–1736.Google Scholar
[2]Eklund, P., Beckers, M., Jansson, U., Hogberg, H., and Hultman, L., The Mn+1AXn phases: Materials science and thin-film processing, Thin Solid Films 518 (2010), 1851–1878.Google Scholar
[3]Eklund, P., Beckers, M., Frodelius, J., Hogberg, H., and Hultman, L., Magnetron sputtering of Ti3SiC2 thin films from a compound target, J. Vac. Sci. Technol. A 25 (2007), 1381–1388.Google Scholar
[4]Sarakinos, K., Alami, J., and Konstantinidis, S., High power pulsed magnetron sputtering: A review on scientific and engineering state of the art, Surf. Coat. Tech. 204 (2010), 1661–1684.Google Scholar
[5]Christie, D.J., Target material pathways model for high power pulsed magnetron sputtering, J. Vac. Sci. Technol. 23 (2005), 330–335.Google Scholar
[6]Mahiheu, S., Buyle, G., Depla, D., Heirwegh, S., Ghekiere, P., and De Gryse, R., Monte Carlo simulation of the transport of atoms in DC magnetron sputtering, Nucl. Instrum. Methods Phys. Res. B 243 (2006), 313–319.Google Scholar
[7]Goldstein, H., Classical Mechanics, 2nd edition, Addison-Wesley: Reading, MA, USA, 1980.Google Scholar
[8]Everhart, E., Stone, G., and Carbone, R.J., Classical calculation of differential cross section for scattering from a Coulomb potential with exponential screening, Phys. Rev. 99 (1955), 1287–1290.Google Scholar
[9]Russek, A., Effect of target gas temperature on the scattering cross section, Phys. Rev. 120 (1960), 1536–1542.Google Scholar
[10]Biersack, J.P. and Eckstein, W., Sputtering studies with the Monte Carlo Program TRIM.SP, Appl. Phys. A 34 (1984), 73–94.CrossRefGoogle Scholar
[11]Neidhardt, J., Mraz, S., Schneider, J.M., Strub, E., Bohne, W., Röhrich, J., and Mitterer, C., Experiment and simulation of the compositional evolution of TiB thin films deposited by sputtering of a compound target, J. Appl. Phys. 104 (2008), 063304.Google Scholar
[12]Riley, D.P., O’Connor, D.J., Dastoor, P., Brack, N., and Pigram, P.J., Comparative analysis of Ti3SiC2 and associated compounds using x-ray diffraction and x-ray photoelectron spec-troscopy, J. Phys. D: Appl. Phys. 35 (2002), 1603–1611.Google Scholar