Published online by Cambridge University Press: 06 March 2019
Recent advances in MOS integrated circuit technology have opened new, high-volume applications utilizing epitaxial silicon-on- insulating substrates. To provide good quality heteroepitaxial silicon films for the semiconductor industry, a development program has been established to improve both the crystalline quality and the fabrication techniques for the most promising current substrate, magnesium aluminum spinel.
The role of X-ray diffraction techniques in the investigation of crystal quality, substrate surface quality, and epitaxial film quality are discussed, and results interpreted as the program is traced from crystal growth to epitaxial film analysis.