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X-Ray Determination of Stresses Distribution in a Coarse Grained Silicon Billet

Published online by Cambridge University Press:  06 March 2019

P. Gergaud ,
G. Dour ,
K. Inal  and
J. L. Lebrun
P. Gergaud
Affiliation:
ENSAM, LM3, URA 1219, 151 Bd de l'Hdpital, 75103 Paris, FRANCE MATOP, URA CNRS 1530, Case 151, Faculté des sciences de St. Jérôme, F- 13397 Marseille Cedex 20 - FRANCE
G. Dour
Affiliation:
EPM-MADYLAM, ENSHMG, BP 95, 38 402 Saint Martin d'Hères, FRANCE PHOTOWATT Int. S.A., 33 rue St. Honoré, 38 500 Bourgoin Jallieu, FRANCE
K. Inal
Affiliation:
ENSAM, LM3, URA 1219, 151 Bd de l'Hdpital, 75103 Paris, FRANCE
J. L. Lebrun
Affiliation:
ENSAM, LM3, URA 1219, 151 Bd de l'Hdpital, 75103 Paris, FRANCE
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Abstract

The present study concerns residual stresses analysis in porycrystalhtie solar silicon material, which is continuously cast in a cold crucible. The observation of cracks and a modeling of thermal stresses suggest us that stresses in the center region are tensile and the ones in the peripheral region are compressive. X-ray measurement of stresses would be an experimental proof of the observations and an evaluation of the stresses levels. Unfortunately, the obtained material exhibits coarse grains with the size of up to one millimeter. In this case, where only a few crystals are irradiated by the incident X-ray beam, the classical sin2Ψ method is no longer valid. A specific analysis must be carried out. The results are of good accuracy comparing the low stress levels observed. The measured stress distribution on a radius of the billet is not always in good agreement with the analytical calculus.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995 , pp. 225 - 235
Copyright
Copyright © International Centre for Diffraction Data 1995

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