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Thickness Measurement of Epitaxical Thin Films by X-ray Diffraction Method

Published online by Cambridge University Press:  06 March 2019

J. Chaudhuri ,
S. Shah  and
J.P. Harbison
J. Chaudhuri
Affiliation:
The Wichita State University Mechanical Engineering Department Wichita, KS 67208
S. Shah
Affiliation:
The Wichita State University Mechanical Engineering Department Wichita, KS 67208
J.P. Harbison
Affiliation:
Bellcore Red Bank, NJ
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Abstract

A method was described for determining the thickness of epitaxical thin films common to electronic materials. The equations were developed based on the kinematical theory of X-ray diffraction and effects of both primary and secondary extinctions were considered. As an example of the applications of this method, thickness measurement of AlGaAs thin films on GaAs was demonstrated. These films were grown by molecular beam epitaxy. The integrated reflected intensities from the film and the substrate were obtained by the X-ray double crystal diffractometer. An excellent agreement was obtained between the results from X-ray measurements and RHEED oscillation data.

Type
VI. Analysis of Thin Films by XRD and XRF
Information
Advances in X-Ray Analysis , Volume 32: Thirty-Seventh Annual Conference on Applications of X-ray Analysis, August 1-5, 1988 , 1988 , pp. 279 - 284
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

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