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Published online by Cambridge University Press: 06 March 2019
In TXRF analysis of impurities in Si wafers, one of the analytical problems is the separation of the peaks of interest (e.g., fluorescence peaks from Fe or Cr) from various background artifacts. These background artifacts include (a) a large Si Kα fluorescence peak, (b) a large peak from the scattered and diffracted primary beam (e.g., W Lβ), (c) a continuum background, (d) scattered radiation in the vicinity of the primary beam peak, (e) an escape peak from the primary beam peak, and (f) spurious Fe and Ni peaks from the detector. This paper will present a scheme for the separation of these components using a fitting procedure based on a commercial spreadsheet.