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Recent Developments in Surface and Thin Film Analysis using Low - Energy Electron Induced X-Ray Spectrometry (LEEIXS)

Published online by Cambridge University Press:  06 March 2019

M.J. Romand ,
F. Gaillard  and
M. Charbonnier
M.J. Romand
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I 69622 Villeurbanne Cedex, FRANCE
F. Gaillard
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I 69622 Villeurbanne Cedex, FRANCE
M. Charbonnier
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I 69622 Villeurbanne Cedex, FRANCE
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Abstract

A review is given of the main gas-discharge sources and auxiliary equipments which were used in soft and ultra-soft X-ray emission spectrometry. Special attention is paid to the basic principles and instrumentation of low-energy electron-induced X-ray spectrometry (LEEIXS) whose excitation source is an electron beam generated in a glow-discharge system. Capabilities of LEEIXS in surface and thin film analysis and characterization are illustrated by examples dealing with control and optimization of surface treatment and thin film deposition processes. Sensitivity of the technique down to the submonolayer range and influence of backscattering phenomena are shown.

Type
XI. Thin-Film and Surface Characterization by XRS and XPS
Information
Advances in X-Ray Analysis , Volume 35 , Issue B: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 767 - 781
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

1. Thornton, J. A., in : “Deposition technologies for films coatings .Developments and Applications,” R.F, Bunshah et al. eds., Noyes Publications, Park Ridge, USA (1982).Google Scholar
2. Harrison, W. W.. in: Proc.“XXVIIth Colloquium Spectroscopic urn Internationale,” Bergen, Norway (1991) p. C-PL-3. Google Scholar
3. Boumans, P. W. J. M., in: “Inductively coupled plasma emission spectroscopy,” Vol 1 and 2, Wiley, New York (1987).Google Scholar
4. Date, A. R., Gray, A. L., in : “Applications of inductively coupled plasma mass spectroscopy,” Blackie, Glasgow (1983).Google Scholar
5. Harrison, W. W., Hess, K. R., Marcus, R. K., and King, F. L., Anal. Chem., 58: 341 (1986).Google Scholar
6. Oechsner, H., in.: “Topics in Current Physics. Thin film and Depth Profile Analysis,” Vol 37, H.Oechsner ed., Springer-Verlag, Berlin (1984).Google Scholar
7. Berneron, R., Spectrochim. Acta. B 33 : 443 (1978).Google Scholar
8. Romano, M.:, Bador, R., Charbonnier, M. and Gaillard, F., X-ray Spectrometry. 16:746(1987).Google Scholar
9. Romand, M. J., Gaillard, F., Charbonnier, M., and Urch, D. S., Adv. in X-ray Analysis. 34 (1991).Google Scholar
10. Rocca, J. J., Mayer, J. D., Farrell, M. R., and Collins, G. L., J.Appl.Phys., 56: 790 (1984).Google Scholar
11. Romard, M., Gaillard, F., and Charbonnier, M., in: “Plasma Surface Engineering,” E.Broszeit et al. eds., Vol. 2, DGM Informationgesellschaft Verlag, Oberursel (1988) p.759–766.Google Scholar
12. Wyckoff, R. W. G., and Davidson, F. D., Nature, 205: 969 (1965); Rev. Sci. Instrum., 34: 572 (1963).Google Scholar
13. Davidson, F. D., and Wyckoff, R. W. G., Noretco Rept., 14 :3 (1967).Google Scholar
14. Wyckoff, R. W. G., and Davidson, F, D., J.Appl.Phys, 36: 1883 (1965).Google Scholar
15. Davidson, F. D., and Wyckoff, R. W. G., Adv. in X-ray Analysis, 9: 344 (1966).Google Scholar
16. Solomon, J. S., and Baun, W. L., Rev. Sci.Instrum., 40: 1458 (1969).Google Scholar
17. Vanhatalo, J., Kaihola, L., and Suoninen, E.. J.Phys.E : Sci.Instrum., 9: 1156 (1976).Google Scholar
18. McGee, J. F., and Saha, T., Adv. in X-ray Analysis. 22: 241 (1976).Google Scholar
19. Larribau, E., Grubis, B., and Sahores, J., French Patent, 69-31.060 (1969).Google Scholar
20. Sahores, J. J., Larribau, E., and Mihura, J., Adv. in X-ray Analysis, 16: 27 (1973).10.1154/S0376030800003888Google Scholar
21. Winner, A. W., and Van Meijl, E. W. J. M.. Spectrochim. Acta., 34 B: 415 (1979).Google Scholar
22. Mills, J. C., and Belcher, C. B.. X-ray Spectrom., 7: 138 (1978).Google Scholar
23. Romand, M., Bouyssoux, G., and Bador, R., in: Proc.” XLXth Colloquium Spectroscopicum Internationale,” Philadephia (1976), Extended Abstract 203. Google Scholar
24. Romand, M., Bador, R., Roche, A., and Bouyssoux, G., J.Microsc.Spectrosc. Electron., 2 : 627 (1977).Google Scholar
25. Bador, R., Roche, A., Bouyssoux, G., and Romand, M., Spectrochim. Acta., 33 B: 437 (1978).Google Scholar
26. Roche, A. , Bador, R., Buiguez, F., Bouyssoux, G., Charbonnier, M., and Romand, M., in: Proc.“XXIst Colloquium Spectroscopicum Internationale,” Cambridge (1979), Extended Abstract p.214. Google Scholar
27. Bador, R., Romand, M., Charbonnier, M., and Roche, A., Adv. in X-ray Analysis. 24:351(1981).Google Scholar
28. Gaillard, F., Romand, M., Roche, A., Charbonnier, M., Bador, R., and Desestret, A., in: “Passivity of Metals and Semi-conductors,” M.Froment ed., Elsevier. Sci. Publi., Amsterdam (1983) p. 181. Google Scholar
29. Romand, M., Gaillard, F., Charbonnier, M., and Roche, A., Adhesion, J. , 23: 1 (1987).Google Scholar
30. Bouyssoux, G., Gaillard, F., and Roche, A., in : Proc.” International Symposium on Trends and New Applications in thin Films,” Strasbourg (1987) p. 369–373.Google Scholar
31. Bouyssoux, G., Gaillard, F., and Romand, M., in: Proc.“XXVIIth Colloquium Spectroscopicum Internationale,” Bergen, Norway (1991) p. C-PO-24. Google Scholar
32. Bouyssoux, G. et al., to be submitted.Google Scholar
33. Deshayes, L., Charbonnier, M., and Romand, M., Le vide, les Couches minces. suppl. n° 257 (1991).Google Scholar
34. Charbonnier, M., Romand, M., and Roche, A., These Proceedings.Google Scholar
35. Hiliel, R., Berthet, M. P., Roche, A., and Bouix, J., J.Materials Sci., 25: 3191 (1990).Google Scholar
36. Chino, C., Charbonnier, M., de Becdelievre, A. M., Guizard, C., Pauthe, M., and Quinson, J. F., in: Proc. Eurogel 91 Saarbrucken, Germany (1991), Under press.Google Scholar
37. Hecq, M., and Leleux, J., J.Vac.Sci.Techn,. A5; 1760 (1987).Google Scholar
38. Hecq, M., and Leleux, J., Anal, chem., 59: 440 (1987).Google Scholar
39. Hecq, M., Spectrochim. Acta. 43B : 1 (1988).Google Scholar
40. Charbonnier, M., Romand, M., and Gaillard, F., Anamsis. 16 : 17 (1988).Google Scholar
41. Gyani, A. K., McCixisty, P., Urch, D. S., Charbonnier, M., Gaillard, F., and Romand, M., Adv. in X-ray Analysis. 33 : 247 (1990).Google Scholar
42. Gaillard, F., and Romand, M., Surf. Interface Anal., 16 : 429–434 (1990).Google Scholar
43. Carson, R. D., Frank, C. P, Schnatterly, S., and Zutavern, F., Rev. Sci. Instrum., 55 : 1973 (1984).Google Scholar
44. Szasz, A.. and Kojnok, J.. Appl. Surf. Sci., 24 : 34(1985).Google Scholar
45. Andermann, G., Fujiwara, F., Huang, T. C., Howard, J. K., and Staud, N., Adv. in X-ray Analysis. 32 : 261 (1989).Google Scholar
46. Andermann, G., Appl. Surf. Sci., 31 : 1 (1988).Google Scholar
47. Scimeca, T., and Andermann, G., Surf. Interface Anal, 10 : 321–326 (1987).Google Scholar
48. Rubensson, J. E., Wassdahl, N., Gray, G., Rindstedt, J., Nyholm, R., Cramm, S., Martensson, N., and Nordgren, J., Phys. Rev. Lett., 60 : 1759 (1988).Google Scholar
49. Claesson, Y., Wassdahl, N., Georgson, M., Gray, B., Ribbing, C. G., and Nordgren, J., Vacuum. 41 : 1275 (1990).Google Scholar
50. Powell, C, J. Rev. Modern. Phys., 48 : 33–47 (1976).Google Scholar
51. Kramers, H. A., Phil. Mag., 46 : 836 (1923).Google Scholar
52. Rao-Sahib, T. S., and Wittry, D. B., J. Appl. Phys., 45 : 5060 (1974).Google Scholar