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Preliminary Study Of the Behavior Of HPGe Detectors With Ion Implanted Contacts in the Ultralow-Energy X-Ray Region

Published online by Cambridge University Press:  06 March 2019

M. Slapa ,
J. Chwaszczewska ,
J. Jurkowski ,
A. Latussynski ,
G.C. Huth  and
A.J. Dabrowski
M. Slapa
Affiliation:
Institute of Nuclear Research, Seminconductor Detector Laboratory, 05-400 Swierk near Warsaw, Poland
J. Chwaszczewska
Affiliation:
Institute of Nuclear Research, Seminconductor Detector Laboratory, 05-400 Swierk near Warsaw, Poland
J. Jurkowski
Affiliation:
Institute of Nuclear Research, Seminconductor Detector Laboratory, 05-400 Swierk near Warsaw, Poland
A. Latussynski
Affiliation:
Institute of Physics, Univ. of Marie Curie-Sklodowska Lublin, ul. Nowotki 10, Poland
G.C. Huth
Affiliation:
Univ. of Southern California, Medical Imaging Science Group, Marina del Rey, California 90291, USA
A.J. Dabrowski
Affiliation:
Univ. of Southern California, Medical Imaging Science Group, Marina del Rey, California 90291, USA
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Abstract

Preliminary study of performance of an HPGe detector with an ion implanted entrance window in the spectrometry of the ultralowenergy x-rays is presented.

For the first time it has been shown that almost symmetric photopeaks and absence of low energy tailing can be obtained in this region from HPGe detectors.

Type
I. XRF Detectors and XRF Instrumentation
Information
Advances in X-Ray Analysis , Volume 25: Thirtieth Annual Conference on Applications of X-ray Analysis, August 3-7, 1981 , 1981 , pp. 23 - 30
Copyright
Copyright © International Centre for Diffraction Data 1981

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