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Impurity Analysis of Silicon Wafers by Total Reflection X-ray Fluorescence Analysis

Published online by Cambridge University Press:  06 March 2019

Sigeaki Nomura ,
Kazuo Nishihagi  and
Kazuo Tauiguchi
Sigeaki Nomura
Affiliation:
Osaka Electro-Communication University, Osaka, Japan
Kazuo Nishihagi
Affiliation:
Technos Corporation, Osaka, Japan
Kazuo Tauiguchi
Affiliation:
Osaka Electro-Communication University, Osaka, Japan
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Extract

High purity of silicon wafers is demanded by the high performance and highly integrated IC and LSI semiconductors. Impurities on, or in, the silicon wafer have a big influence on the characteristics of the semiconductor as a final product. Usually, these impurities are introduced by water during washing, by bad handling, or by reagents and processes.

Typical influences of these impurities are shown in Table 1. These elements are present at too small concentration to he detected by ordinary analytical methods (except for oxygen). Usually, XPS , AES, NAA, SIMS, ICPAES, ICP-MS and AAS are used for trace analysis.

Type
V. XRF Applications
Information
Advances in X-Ray Analysis , Volume 32: Thirty-Seventh Annual Conference on Applications of X-ray Analysis, August 1-5, 1988 , 1988 , pp. 205 - 210
Copyright
Copyright © International Centre for Diffraction Data 1988

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