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How to Use the Features of Total Reflection of X-Rays for Energy Dispersive XRF

Published online by Cambridge University Press:  06 March 2019

H. Schwenke
Affiliation:
Institute of Physics, GKSS Research Centre Geesthacht, P.O.Box: 1160, 2054 Geesthacht, Federal Republic of Germany
W. Berneike
Affiliation:
Institute of Physics, GKSS Research Centre Geesthacht, P.O.Box: 1160, 2054 Geesthacht, Federal Republic of Germany
J. Knoth
Affiliation:
Institute of Physics, GKSS Research Centre Geesthacht, P.O.Box: 1160, 2054 Geesthacht, Federal Republic of Germany
U. Weisbrod
Affiliation:
Institute of Physics, GKSS Research Centre Geesthacht, P.O.Box: 1160, 2054 Geesthacht, Federal Republic of Germany
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Abstract

The total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.

Type
IV. Techniques and XRF Instrumentation
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

1. Yoneda, Y., Horiuchi, T., Rev. Sci. Instr., 42: 1069 (1971).Google Scholar
2. Prange, A., Knoth, J., St, R.P.öβel, H. Böddeker, and Kramer, K., Anal. Chim. Acta, 195: 275 (1987).Google Scholar
3. Eichinger, P., Rath, H.J., and Schwenke, H., Semiconductor Fabrication: Technology and Metrology, ASTM STF 990, (Gupta, D.C., ed. ) American Society for Testing and Materials, 1988.Google Scholar
4. Parrat, L.G., Phys. Rev., 95: 359 (1954).Google Scholar
5. Rieh. seifert & Co. , Bogenstraβe 41, D-2070 Ahrensburg, FRG.Google Scholar
6. Atomika Technische Physik GmbH, Postfach-450135, D-8000 Munchen, FRG.Google Scholar
7. Penka, V., Hub, W., Spec. Chim. Acta B, in print.Google Scholar