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Gamma Ray and X-Ray Imaging Studies of the Location and Shape of the Melt-Solid Interface During Bridgman Growth of Germanium and Lead-Tin-Telluride

Published online by Cambridge University Press:  06 March 2019

R. T. Simchick ,
S. Sorokach ,
A. L. Fripp ,
W. J. Debnam ,
R. F. Berry  and
P. G. Barber
R. T. Simchick
Affiliation:
Lockheed Engineering and Sciences Corporation Hampton, Va.23666
S. Sorokach
Affiliation:
Lockheed Engineering and Sciences Corporation Hampton, Va.23666
A. L. Fripp
Affiliation:
NASA Langley Research Center Hampton, VA 23665
W. J. Debnam
Affiliation:
NASA Langley Research Center Hampton, VA 23665
R. F. Berry
Affiliation:
NASA Langley Research Center Hampton, VA 23665
P. G. Barber
Affiliation:
Longwood College Farmville, VA 23901
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Extract

The success of new electronic materials has been due in part to the development of procedures that produce semiconductors of sufficient purity and perfection. These materials have been grown from the gas phase, solution, and melts. The Bridgman technique is one way semiconductor crystals are grown from the melt. In such furnaces the semiconductor material is usually sealed in an ampoule made of quartz or other suitable material, placed inside the tubular furnace, and heated to completely melt the sample. The ampoule with the molten material is slowly removed from the furnace by one of three ways.

Type
XV. X-Ray Imaging and Tomography
Information
Advances in X-Ray Analysis , Volume 35 , Issue B: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 1295 - 1300
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

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