Crossref Citations
This Book has been
cited by the following publications. This list is generated based on data provided by Crossref.
Brazil, Thomas J.
2007.
The modelling and simulation of high‐frequency electronic circuits.
International Journal of Circuit Theory and Applications,
Vol. 35,
Issue. 5-6,
p.
533.
De Groote, Fabien
Teyssier, Jean-Pierre
Gasseling, Tony
Jardel, Olivier
and
Verspecht, Jan
2008.
Introduction to measurements for power transistor characterization.
IEEE Microwave Magazine,
Vol. 9,
Issue. 3,
p.
70.
You, F.
He, S.
Tang, X.
and
Cao, T.
2008.
Analysis of a class E power amplifier with series-parallel resonator.
IET Circuits, Devices & Systems,
Vol. 2,
Issue. 6,
p.
476.
Anding Zhu
Draxler, P.J.
Chin Hsia
Brazil, T.J.
Kimball, D.F.
and
Asbeck, P.M.
2008.
Digital Predistortion for Envelope-Tracking Power Amplifiers Using Decomposed Piecewise Volterra Series.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 56,
Issue. 10,
p.
2237.
Wood, John
Aaen, Peter H.
and
Pla, Jaime A.
2008.
Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications.
p.
134.
Bridges, D.
Wood, J.
Guyonnet, M.
and
Aaen, P. H.
2008.
A nonlinear electro-thermal model for high power RF LDMOS transistors.
p.
475.
Wood, J.
Lamey, D.
Guyonnet, M.
Chan, D.
Bridges, D.
Monsauret, N.
and
Aaen, P. H.
2008.
An extrinsic component parameter extraction method for high power RF LDMOS transistors.
p.
607.
2009.
Fundamentals of RF and Microwave Transistor Amplifiers.
p.
91.
2009.
Fundamentals of RF and Microwave Transistor Amplifiers.
p.
61.
Wood, J.
Aaen, P.H.
Bridges, D.
Lamey, D.
Guyonnet, M.
Chan, D.S.
and
Monsauret, N.
2009.
A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 57,
Issue. 2,
p.
282.
Darwish, A.M.
Huebschman, B.D.
Viveiros, E.
and
Hung, H.A.
2009.
Dependence of GaN HEMT Millimeter-Wave Performance on Temperature.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 57,
Issue. 12,
p.
3205.
Ban Leong Ooi
Zheng Zhong
and
Mook-Seng Leong
2009.
Analytical Extraction of Extrinsic and Intrinsic FET Parameters.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 57,
Issue. 2,
p.
254.
2009.
Fundamentals of RF and Microwave Transistor Amplifiers.
p.
363.
Dunleavy, Lawrence
Baylis, Charles
Curtice, Walter
and
Connick, Rick
2010.
Modeling GaN: Powerful but Challenging.
IEEE Microwave Magazine,
Vol. 11,
Issue. 6,
p.
82.
Maas, Stephen
2010.
Division by current: A new approach to FET capacitance modeling.
p.
16.
Crupi, G.
Schreurs, D.M.M.-P.
and
Caddemi, A.
2010.
Theoretical and experimental determination of onset and scaling of non-quasi-static phenomena for interdigitated fin field effect transistors.
IET Circuits, Devices & Systems,
Vol. 4,
Issue. 6,
p.
531.
Chen, Chi
Hao, Yue
Yang, Ling
Quan, Si
Ma, Xiaohua
and
Zhang, Jincheng
2010.
Nonlinear characterization of GaN HEMT.
Journal of Semiconductors,
Vol. 31,
Issue. 11,
p.
114004.
Zhang, Q.J.
Bandler, John
Koziel, Slawomir
Kabir, Humayun
and
Zhang, Lei
2010.
ANN and space mapping for microwave modelling and optimization.
p.
980.
Wood, John
and
Aaen, Peter H.
2010.
On the modeling of LDMOS RF power transistors.
p.
1.
Aaen, Peter H.
Wood, John
Li, Quan
and
Mares, Eddie
2010.
Thermal resistance modeling for the electrothermal layout of high-power RF transistors.
p.
1672.
