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4 - Linear-mode mm-wave silicon power amplifiers

Published online by Cambridge University Press:  05 April 2016

By
James Buckwalter
Edited by
Hossein Hashemi  and
Sanjay Raman
James Buckwalter
Affiliation:
University of California, Santa Barbara
Hossein Hashemi
Affiliation:
University of Southern California
Sanjay Raman
Affiliation:
Virginia Polytechnic Institute and State University
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Summary

Why linear?

Two fundamental questions arise in the design of a power amplifier circuit. First, what is the maximum output power given a device technology? Second, what is the peak power-added efficiency (PAE) given a device technology? In this chapter, these fundamental limits on output power and efficiency are analyzed for single-stage, linear millimeter-wave (mm-wave) PAs based on device and circuit factors. Linear amplifiers are favored under several conditions. Foremost, a linear response might be demanded for complex signaling. Quadrature amplitude modulation (QAM) requires a linear response to support the peak-to-average power ratio (PAPR) of the signal envelope. As shown in Fig. 4.1, the in-phase and quadrature symbols – shown as a 64QAM constellation – are up-converted to an RF carrier and amplified by the power amplifier. The envelope of the modulated RF signal is shown at the output of the PA and demonstrates substantial variation in the output power. The ratio of the peak-to-average power indicates the linearity requirements of the power amplifier. Additionally, concerns about the out-of-channel interference, e.g. spectral leakage, also dictate requirements for system linearity. However, specification of adjacent channel interference is not well-established at mm-wave bands since the spatial selectivity of the communication system at these bands is considered to be higher than for RF systems.

In RF systems, linear amplifiers are rarely sufficiently linear and additional linearization can be introduced in the form of feedforward, feedback, or digital pre-distortion. The evolution of communication standards tends to favor more spectrally efficient communication and, in turn, motivates interest in linearization techniques for power amplifiers. In the case of mm-wave communication, early commercial standards have avoided the need for linear amplifiers by using constant envelope waveforms such as GMSK or simple modulation schemes that feature low PAPR such as QPSK. As more interest develops in mm-wave QAM, circuit and system techniques that offer a linear variation in the output power will return to the forefront.

A second motivation for linear amplifier designs is that this class of operation may offer competitive output power and efficiency at mm-wave bands to other classes of amplifiers. For instance, switching amplifiers require harmonic control that complicates the design of these amplifiers over wide bandwidth at mm-wave bands. Another desirable feature of linear amplifiers is that two PAs can be configured to be maximally efficient at both the average and peak power levels.

Type
Chapter
Information
mm-Wave Silicon Power Amplifiers and Transmitters , pp. 139 - 179
Publisher: Cambridge University Press
Print publication year: 2016

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References

[1] S., Pornpromlikit, J., Jeong, C. D., Presti, A., Scuderi, and P. M., Asbeck, “A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS,” IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 1, pp. 57–64, 2010. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5352239Google Scholar
[2] S., Pornpromlikit, H.-T., Dabag, B., Hanafi, et al., “A Q-band amplifier implemented with stacked 45-nm CMOS FETs,” in Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 2011, pp. 1–4. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6062465
[3] H., Dabag, B., Hanafi, F., Golcuk, et al., “Analysis and design of stacked-FET millimeterwave power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 4, pp. 1543–1556, 2013. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6475208Google Scholar
[4] J., Kim, H., Dabag, P., Asbeck, and J. F., Buckwalter, “Q-band and W-band power amplifiers in 45-nm CMOS SOI,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 6, pp. 1870–1877, 2012. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6197245Google Scholar
[5] P., Habas, “Hot-carrier NMOST degradation at periodic drain signal,” in Microelectronics, 2002. 23rd International Conference on, vol. 2, 2002, pp. 731–734. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1003361Google Scholar
[6] C. D., Presti, F., Carrara, A., Scuderi, S., Lombardo, and G., Palmisano, “Degradation mechanisms in CMOS power amplifiers subject to radio-frequency stress and comparison to the DC case,” in Reliability Physics Symposium, 2007. Proceedings. 45th Annual. IEEE International, 2007, pp. 86–92. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=4227614Google Scholar
[7] A., Sayag, D., Ritter, and D., Goren, “Compact modeling and comparative analysis of silicon-chip slow-wave transmission lines with slotted bottom metal ground planes,” IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 4, pp. 840–847, 2009. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=4803741Google Scholar
[8] I., Bahl, Fundamentals of RF and Microwave Transistor Amplifiers. Wiley, 2009.
[9] P., Colantonio, F., Giannini, and E., Limiti, High Efficiency RF and Microwave Solid State Power Amplifiers. Wiley, 2009.
[10] M., Rickelt, H.-M., Rein, and E., Rose, “Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors,” IEEE Transactions on Electron Devices, vol. 48, no. 4, pp. 774–783, 2001.Google Scholar
[11] U. R., Pfeiffer and A., Valdes-Garcia, “Millimeter-wave design considerations for power amplifiers in an SiGe process technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 1, pp. 57–64, 2006.Google Scholar
[12] H.-T., Dabag, J., Kim, L. E., Larson, J. F., Buckwalter, and P. M., Asbeck, “A 45-GHz SiGe HBT amplifier at greater than 25% efficiency and 30-mW output power,” in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE, 2011, pp. 25–28. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6082742
[13] W. H., Doherty, “A new high efficiency power amplifier for modulated waves,” Proceedings of the Institute of Radio Engineers, vol. 24, no. 9, pp. 1163–1182, 1936.Google Scholar
[14] S. C., Cripps, RF Power Amplifiers for Wireless Communications. Artech House, 2006.
[15] A., Agah, B., Hanafi, H., Dabag, et al., “A 45 GHz Doherty power amplifier with 23% PAE and 18 dBm output power in 45 nm SOI CMOS,” in Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6259632
[16] A., Agah, H., Dabag, B., Hanafi, et al., “A 34% PAE, 18.6 dBm 42–45 GHz stacked power amplifier in 45-nm SOI CMOS,” in Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 57–60. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6242231
[17] T. S. D., Cheung and J. R., Long, “Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits,” IEEE Journal of Solid-State Circuits, vol. 41, no. 5, pp. 1183–1200, 2006. [Online]. Available: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1624408Google Scholar

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