Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
7 - Low-noise tuned amplifier design
Published online by Cambridge University Press: 05 March 2013
Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
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- High-Frequency Integrated Circuits , pp. 439 - 502Publisher: Cambridge University PressPrint publication year: 2013
References
2011 ITRS Roadmap.
et al., “A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design,”
IEEE JSSC, 32(9): 1430–1439, September 1997 and S. P. Voinigescu and M. C. Maliepaard on "High-frequency noise and impedance matched integrated circuits" US Patent no. 5789799.Google Scholar
, , , , , , , , , , , and , , , , , and , “SiGe BiCMOS for analog, high-speed digital and millimetre-wave applications beyond 50GHz,” IEEE BCTM Digest, pp. 223–230, October 2006.
, , , , and “60GHz PA and LNA in 90nm RF-CMOS,” IEEE RFIC Symposium Digest, pp. 147–150, June 2006.
, , , , , and , “The invariance of the noise impedance in n-MOSFETs across technology nodes and its application to the algorithmic design of tuned low noise amplifiers,” IEEE Si Monolithic Integrated Circuits in RF Systems, pp. 245–248, Jan. 2007.
, , , , , , , , , , , , , , , , , , , , , and , “RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications,” IEEE IEDM Digest, pp. 604–607, December 2010.
and , “Methodology for simultaneous noise and impedance matching in W-Band LNAs,” IEEE CSICS Digest, pp. 279–282, November 2006.
, , and , “65GHz receiver in SiGe BiCMOS using monolithic inductors and transformers,” 6 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Technical Digest, pp. 265–268, Jan. 2006.
, “A 60GHz direct-conversion CMOS receiver,” IEEE ISSCC Digest, pp. 400–401, February 2005.
, , , , , , , , and , “A low-voltage SiGe BiCMOS 77GHz automotive radar chipset,”
IEEE MTT, 56: 1092–1104, May 2008.Google Scholar
, , , and , “Characterization of the noise parameters of SiGe HBTs in the 70–170 GHz Range,” IEEE MTT, in print. 2011.
, , , and , “A wideband W-band receiver front-end in 65nm CMOS,”
IEEE JSSC, 43(8): 1717–1730, August 2008.Google Scholar
, , and , “A Sub-mW 960MHz ultra-wideband CMOS LNA,” IEEE RFIC Symposium Digest, pp. 35–38, June 2005.
and , “60GHz LNA radio receiver ICs in 65nm CMOS,” 4th year undergraduate project, ECE Dept. University of Toronto, April 2008.
, , , , , and , “A 1.2V, 140GHz receiver with on-die antenna in 65nm CMOS,” IEEE RFIC Symposium Digest, pp. 239–242, June 2008.
et al., “ SiGe bipolar transceiver circuits operating at 60GHz,”
IEEE JSSC, 40: 156–157, January 2005.Google Scholar
, , and , “Design considerations for CMOS low-noise amplifiers,” IEEE RFIC Symposium Digest, pp. 97–100, June 2004.
, , and , “Wide-band CMOS low-noise amplifier exploting thermal noise canceling,”
IEEE JSSC, 39: 275–282, February 2004.Google Scholar
and , “A 1.9GHz low-voltage silicon bipolar receiver front-end for wireless personal communication systems,”
IEEE JSSC, 30: 1438–1448, December 1995.Google Scholar
and , “A 1-V transformer-feedback low-noise amplifier for 5GHz wireless LAN in 0.18-μm CMOS,”
IEEE JSSC, 38: 427–435, March 2003.Google Scholar
, , and , “A 1.2V Reactive-feedback 3.1–10.6 GHz ultrawideband low-noise amplifier in 0.13μm CMOS,” IEEE RFIC Symposium Digest, pp. 55–58, 2006.
, , and , “A passive W-band imager in 65nm bulk CMOS,”
IEEE JSSC, 45(10): 1981–1991, October 2010.Google Scholar
, , , , , and , “A zero-IF 60GHz 65nm CMOS transceiver with direct BPSK modulation demonstrating up to 6Gb/s data rates over a 2m wireless link,”
IEEE JSSC, 44(8): 2085–2099, August 2009.Google Scholar
, , , , and , “A 60GHz RF IQ DAC transceiver with on-die at-speed loopback,” IEEE RFIC Symposium Digest, Baltimore, June 2011.
and , “5.8GHz and 12.6GHz Si Bipolar MMICs,” IEEE ISSCC Digest, pp. 372–373, 1997.
and , “An inductor-based 52GHz 0.18μm SiGe HBT cascode LNA with 22dB gain,” European Solid-State Circuits Conference, pp. 287–290, September 2004.
, , , , , , and , “Identifying the bottlenecks to the RF performance of FinFETs,” 23rd International Conference on VLSI Design, 2010.
, , , and , “A 2.5GHz 32nm 0.35mm2 3.5dB NF −5dBm P1dB fully differential CMOS push-pull LNA with integrated T/R switch and ESD protection,” IEEE ISSCC Digest, pp. 56–57, February 2011.
, , , , , , and , “A 40nm CMOS highly linear 0.4-to-6 GHz receiver resilient to 0dBm out-of-band blockers,” IEEE ISSCC Digest, pp. 62–63, February 2011.