Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
4 - High-frequency devices
Published online by Cambridge University Press: 05 March 2013
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
Summary
This chapter reviews the DC, high-frequency, and noise characteristics of field-effect and heterojunction bipolar transistors and discusses the figures of merit and design methodology of high-frequency passive devices such as inductors, transformers, transmission lines, and fixed and variable capacitors (varactors).
Definition of an active device
We define as active an electronic device whose power gain is larger than 1 or 0dB. The power gain is made possible by the conversion of DC power into time-varying power [1].
As illustrated in Figure 4.1, high-frequency active devices can be divided into two large families: field-effect and bipolar devices. In the field-effect category, we include the MOSFET and its derivatives (LDMOS, SOI, FinFET, nanowire FET) and the high electron mobility transistor (HEMT) with its pseudomorphic (p-HEMT) and metamorphic (m-HEMT) derivatives. MOSFETs are currently fabricated in silicon with some silicon-germanium present in the source and drain regions of p-MOSFETs in advanced technology nodes. Commercial HEMTs are realized in several III-V material systems, the most popular being GaAs/InGaAs, InP/InGaAs, and AlGaN/GaN.
- Type
- Chapter
- Information
- High-Frequency Integrated Circuits , pp. 142 - 317Publisher: Cambridge University PressPrint publication year: 2013
References
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