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4 - High-frequency devices

Published online by Cambridge University Press:  05 March 2013

Sorin Voinigescu
Sorin Voinigescu
Affiliation:
University of Toronto
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Summary

This chapter reviews the DC, high-frequency, and noise characteristics of field-effect and heterojunction bipolar transistors and discusses the figures of merit and design methodology of high-frequency passive devices such as inductors, transformers, transmission lines, and fixed and variable capacitors (varactors).

Definition of an active device

We define as active an electronic device whose power gain is larger than 1 or 0dB. The power gain is made possible by the conversion of DC power into time-varying power [1].

As illustrated in Figure 4.1, high-frequency active devices can be divided into two large families: field-effect and bipolar devices. In the field-effect category, we include the MOSFET and its derivatives (LDMOS, SOI, FinFET, nanowire FET) and the high electron mobility transistor (HEMT) with its pseudomorphic (p-HEMT) and metamorphic (m-HEMT) derivatives. MOSFETs are currently fabricated in silicon with some silicon-germanium present in the source and drain regions of p-MOSFETs in advanced technology nodes. Commercial HEMTs are realized in several III-V material systems, the most popular being GaAs/InGaAs, InP/InGaAs, and AlGaN/GaN.

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High-Frequency Integrated Circuits , pp. 142 - 317
Publisher: Cambridge University Press
Print publication year: 2013

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  • High-frequency devices
  • Sorin Voinigescu, University of Toronto
  • Book: High-Frequency Integrated Circuits
  • Online publication: 05 March 2013
  • Chapter DOI: https://doi.org/10.1017/CBO9781139021128.005
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  • High-frequency devices
  • Sorin Voinigescu, University of Toronto
  • Book: High-Frequency Integrated Circuits
  • Online publication: 05 March 2013
  • Chapter DOI: https://doi.org/10.1017/CBO9781139021128.005
Available formats
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Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • High-frequency devices
  • Sorin Voinigescu, University of Toronto
  • Book: High-Frequency Integrated Circuits
  • Online publication: 05 March 2013
  • Chapter DOI: https://doi.org/10.1017/CBO9781139021128.005
Available formats
×