Highly oriented VO2 (M1) thin films are difficult to produce using non-crystalline substrates. For example, to produce such films on glass has required post-annealing or the use of a ZnO transparent layer. Here, we overcome this challenge and report highly oriented VO2 (M1) in the (100) plane directly on the glass substrate by pulsed laser deposition (PLD). We study the influence of the laser wavelengths (1064, 532, 355 and 266 nm) on the orientation of VO2 (M1) deposited on Corning glass. We find that the laser wavelength of 532 nm leads the most highly a-axis textured VO2 (M1) demonstrating the highest reversible metal-to-insulator at about 62 °C with a lowest hysteresis width of approximately 9 °C. One of the conditions is to select the green 532 nm wavelength laser in PLD as this particular laser wavelength also produces films with highest roughness value (of more than 60 nm) when compared to other wavelengths which produce films of roughness values less than 40 nm.

Frequent switching of resistive memory cell may lead to a local accumulation of Joules heat in the device. Since the ReRAM cells are arranged in crossbar arrays with the two electrodes running perpendicular to each other, the heat generated in one device spreads via common electrode metal lines to the neighboring cells causing their performance degradation. Also cells that do not share any of the two electrodes (e.g. the diagonal array cells) with the hot device may also degrade provided the intermediate cells are set to an on-state establishing thus a continuous thermal conduction path between the heated and the probed device. It is found that the heat conduction along the active Cu electrode is more pronounced than that along the inert Pt electrode. Devices with Rh inert electrode performed better than those with Pt electrode due to better heat conductivity properties of Rh vs Pt. The heat dissipation is also found worse for a heated device with narrow and thin lines causing, however less degradation of more distant neighbor cells than for wide and thick metal lines. Finally, there is a trade-off between dissipating the heat quickly form the heated device to increase its maximum switching cycles and the heat exposure of the neighboring devices.

Monoclinic VO2 is a known polymorph of vanadium dioxide that has received much attention due to its oxidative capabilities, geometric configuration, and promising applications in functional windows. VO2 can usually be obtained through a hydrothermal method under high pressure. In this work we report a synthesis of VO2 doped with Manganese using a rapid single-step hydrothermal process with V2O5, manganese (II) acetate and citric acid as precursors. Different syntheses were carried out in which the concentration of V2O5 and citric acid remained constant whereas the concentration of manganese (II) acetate was varied. The reactants underwent a stirring phase for 30 minutes before being loaded into a hydrothermal reactor for 2.5 hours at 200°C. The resultant was washed three times to remove the residual precursors. Imaging and spectroscopy characterizations such as TEM, SEM and UV-VIS-NIR have been performed on different doping concentration and the results display a dependence on doping concentrations.

The doped iron arsenides present outstanding properties, one of them is an unconventional superconductivity, an unusual coexistence of superconductivity and magnetism. We calculated the electronic structure of the pure and Ni-doped BaF e2As2 by the embedded cluster method at the electron correlation level; the latter is calculated through the second- order Møller Plesset perturbation theory. For the doped clusters, we calculated the relaxation of the first and second neighbors of the impurity by optimizing their positions in the cluster. The total electronic density is analyzed through natural bond orbitals and the population of each atomic orbital (basis function) is determined; the robustness of this determination is tested comparing results obtained for the unrelaxed and relaxed cluster. The orbital population analysis uncovers some properties of magnetism and superconductivity in BaFe2As2. From our results, linear elasticity allows us to estimate the relaxation volume of Ni impurity.

Ultrafast electron diffraction has been employed for the study of structural dynamics at surfaces in the time domain. Experiments were performed in a pump-probe setup with femtosecond-laser excitation and subsequent probing through diffraction of a femtosecond electron pulse at a temporal resolution of 350 fs. The system of interest is one atomic layer of indium atoms on a Si(111) surface. Through self-assembly, indium atomic wires form and exhibit a Peierls-like, insulator-to-metal phase transition that can be driven nonthermally through a femtosecond laser pulse. The transient intensity of the diffraction spots indicates the lifting of the Peierls transition and melting of a charge-density wave in only 700 fs, heating of the surface in 6 ps, and formation of a metastable and supercooled phase, which exists for nanoseconds.

A hallmark of life is plasticity, which enables reproduction, evolution, and environmental adaptivity. It is natural to wonder if these remarkable features in nature and biology can be realized in the materials world and implemented in the emerging fields of autonomous systems, artificial intelligence, and animal–machine interfaces. First, we describe fundamental features of neurons and synapses in the brain that are responsible for information processing. Then we discuss mechanisms governing electronic plasticity in correlated electronic quantum materials that mimic organismic behavior. We give examples of learning networks and circuits designed using quantum materials that can be implemented for machine intelligence. We conclude with suggestions for future interdisciplinary research wherein synergistic interactions between orbital filling, defects, and strain could give rise to new functionality of relevance to sensory interfaces (e.g., haptics), neural information processing, and neuroscience.

Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance switching can also come from an entirely electronic origin, as in nanometallic memory, by electron trapping and detrapping. Recent research has revealed additional merits of its mechanism, which entails smart, atomic-sized floating gates that can be easily engineered in amorphous Si, oxides, and nitrides. This article addresses the basic ideas of nanometallic ReRAM, which may also be a contender for analogue computing and non-von Neumann-type computation.

Vanadium dioxide thin films are considered as smart functional coatings for thermal shielding, and are attractive as a passive thermal shield for spacecrafts. In space they would, however, be subjected to bombardment by interstellar dust particles and electromagnetic radiation. Materials subjected to irradiation will suffer damages induced by the displacement cascades initiated by nuclear reaction. Such cosmic radiation can severely impact the structure and function of materials. To study this effect in the laboratory, we have deposited VO2 films on silicon wafers and exposed them to γ-radiation of doses up to 100 kGy by using a 60Co nuklid source with 1.17 and 1.33 MeV photon energy. We anticipate that the γ-radiation causes local structural perturbations which can amount to defects with a corresponding change in electronic structure and thermal shielding property. We report on the photo emission spectroscopy of gamma irradiated VO2 thin films.

Rapid transitions between semiconducting and metallic phases of transition-metal dichalcogenides are of interest for 2D electronics applications. Theoretical investigations have been limited to using thermal energy, lattice strain and charge doping to induce the phase transition, but have not identified mechanisms for rapid phase transition. Here, we use density functional theory to show how optical excitation leads to the formation of a low-energy intermediate crystal structure along the semiconductor-metal phase transition pathway. This metastable crystal structure results in significantly reduced barriers for the semiconducting-metal phase transition pathway leading to rapid transition in optically excited crystals.

Using ultrafast angle-resolved light scattering technique, we were able to trigger photoinduced phase transition processes in V2O3 film grown on a glass substrate. The phase transition is caused by photoacoustic wave in the film and appears as coherent oscillations of scattering signal at various time scales. These processes strongly depend on the size of microstructures constituting the V2O3 film. One of the key findings of our study is the presence of a size dependent phase transition threshold for V2O3 microstructures, where small size structures ( $\tilde <$ 0.5μm) have lowest contribution to the phase transition. The presence of this threshold can be well described by considering uneven internal strain in the films which is one of the key parameters controlling phase transition dynamics in various vanadium oxides.

Thin films of NbO2 are synthesized by oxide molecular-beam epitaxy on (001) MgF2 substrates, which are isostructural (rutile structure) with NbO2. Two growth parameters are systematically varied in order to identify appropriate growth conditions: growth temperature and the partial pressure of O2 during film growth. θ-2θ X-ray diffraction measurements identify two dominant phases in this system at background oxygen pressures in the (0.2–6)×10–7 Torr range: rutile NbO2 is favored at higher growth temperature, while Nb2O5 forms at lower growth temperature. Electrical resistivity measurements were made between 350 K and 675 K on three epitaxial NbO2 films in a nitrogen ambient. These measurements show that NbO2 films grown in higher partial pressures of molecular oxygen have larger temperature-dependent changes in electrical resistivity and higher resistivity at room temperature.

Reversible changes in the conductivity of HfO2 dielectric film betweenhigh and low resistive states of a metal-insulator-metal memory cell wereattributed to the formation of oxygen vacancies and their clustering across theinsulator layer. In this study we present an innovative model which includesgeneration of two-charged states of oxygen vacancies at the anode, theirdiffusion to the cathode, transformation to one-charged state, and then toneutral vacancies. Vacancy clusters in the insulator layer are built from onlyneutral vacancies, while the kinetics of the clustering process is controlled bydiffusion of mobile one-charged state vacancies. Resistive switching is treatedas the formation of critical size vacancy cluster which provides continuousconductive path through the dielectric layer. Good agreement between theexperimental data and the theoretical bias and temperature dependences for thedelay time was obtained.

VO2 is one of the very few natural materials that can be used to modulate terahertz (THz) radiations. A 100-nm thick VO2, when in its metallic phase, has a charge density of more than ∼ 1015 cm-2 which will strongly reflect and absorb the THz radiation; while in its insulator state, the charge density is lowered by several orders of magnitude to be THz transparent. Therefore, exploiting the metal-insulator transition of VO2 is a potential approach to modulate or even switch THz radiation for THz optics. Here we report that VO2 epitaxial thin films on sapphire substrate exhibits 85% amplitude modulation depth in a broad bandwidth, while this value can be improved to 95% when VO2 film is coated on both sides of a substrate. We further demonstrate that with wafer bonding, 4-layered VO2 thin films exhibit a transmittance as low as -20 dB to -30 dB at their metallic state, enough for switching applications. We also report our proof-of-concept demonstration of THz spatial light modulator that exhibits amplitude modulation as large as 96%, -30 dB pixel-to-pixel crosstalk, and a broad THz bandwidth.

Thermal transport across interfaces is an important issue for microelectronics, photonics, and thermoelectric devices and has been studied both experimentally and theoretically in the past. In this paper, thermal interface resistance (1/G) between aluminum and silicon with nanoscale vacancies was calculated using non-equilibrium molecular dynamics (NEMD). Both phonon-phonon coupling and electron-phonon coupling are considered in calculations. The results showed that thermal interface resistance increased largely due to vacancies. The effect of both the size and the type of vacancies is studied and compared. And an obvious difference is found for structures with different type/size vacancies.

We present a simultaneous photoemission spectroscopic, low-energy electron diffraction and low-energy electron microscopic study of the metal-insulator transition of strained VO2. The fraction of rutile structure is extracted from the microscopic measurements throughout the transition, and compared with the fraction of the metallic electrons from photoemission data. We find that at intermediate temperatures, while the system is predominantly monoclinic-like in structure, the electronic component of the transition is much further advanced. Our results provide direct evidence for a monoclinic-like metallic phase of VO2 that is easily accessible at ambient temperatures and pressures.

We have been interested in the plasmonic properties of alternative conducting materials to metals, such as conducting oxides, and we have recently expanded our studies to include highly correlated oxides, such as vanadium dioxide (VO2) thin films. VO2 exhibits a metal-insulator transition (MIT) just above ambient temperature at ∼ 340K. Interestingly, this transition can be induced thermally, optically or applying electric fields. Across the MIT, the optical properties are completely modified over a broad frequency range. We will present our recent optical investigations on the photon induced transition studies on such films, as well as the surface plasmon resonance (SPR) modulation in nanopatterned Au gratings by the thermally induced MIT in VO2 thin films, addressing possibilities of ultrafast SPR modulation with VO2.

Investigation into the phenomenon of resistive switching, a reversible change in electrical resistance by the application of a voltage bias, has given rise to the device fabrication, DC electrical testing, and cross sectional TEM/EELS characterization of nanoscale resistive switching devices. Typically, resistive switching devices are composed of a thin oxide layer between two conductive electrodes where applied bias can alter the resistance states. In a cross-bar array, nonlinearity of device I-V relation is a highly desirable characteristic that helps to mitigate the sneak path current leakage issue. Negative differential resistance (NDR) switching behavior offers such nonlinearity and has been observed in TaOx nanoscale devices utilizing certain electrode materials. To investigate this phenomenon, nanodevices were fabricated by sputtering TaOx onto TiN nanovias capped Nb electrodes. Cross sectional TEM/EELS were performed to reveal the physical and chemical changes in these devices to explore possible origins of nonlinear behavior when these top electrode materials are utilized with TaOx films.

The conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.

We show evidence that the competition between the antiferromagnetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr2Mn2O7, can be manipulated using ultrafast optical excitation. The time-dependent evolution of the Jahn-Teller superlattice reflection, the indicator of the formation of charge and orbital order, was measured at different laser fluences. The laser-induced change in the Jahn-Teller reflection intensity shows a reversal of sign between earlier (∼10 ns) and later (∼150 ns) times during the relaxation of the sample. This is consistent with a physics picture whereby the laser excitation modulates the local competition between the metallic and the insulating phases.