A power MOSFET-based push–pull configuration nanosecond-pulse generator has been designed, constructed, and characterized to permeabilize cells for biological and medical applications. The generator can deliver pulses with durations ranging from 80 ns up to 1 µs and pulse amplitudes up to 1.4 kV. The unit has been tested for in vitro experiments on a medulloblastoma cell line. Following the exposure of cells to 100, 200, and 300 ns electric field pulses, permeabilization tests were carried out, and viability tests were conducted to verify the performance of the generator. The maximum temperature rise of the biological load was also calculated based on Joule heating energy conservation and experimental validation. Our results indicate that the developed device has good capabilities to achieve well-controlled electro-manipulation in vitro.

This paper presents a hybrid design of 1 × 2 and 1 × 4 arrays operating in 0.277–0.292 THz on 65 nm Complementary metal–oxide–semiconductor (CMOS) technology. Each of the chips has an X-band input with 3 ×3 multiplier stages and connected at the output to an on-chip ring antenna. A wideband microstrip Wilkinson four-way and two-way power dividers have been developed on a multilayer printed circuit board to feed the array elements with proper radio frequency and direct current inputs. Demonstrating improvements in effective isotropically radiated power and in total radiated power compared to a single CMOS element, the hybrid integration approach proves effective in implementing coherent THz transmitter arrays. Theoretical and practical factors that reduce the radiated power compared with ideal arrays are also discussed.

A methodology is presented to predict odd-mode instability in power amplifiers under output mismatch effects, as in the case of amplifiers connected to an antenna. This kind of instability is often observed in multi-device configurations, due to their symmetry properties. Unlike the single-ended situation, there is a cancellation of odd multiples of the oscillation frequency at the circuit output, so there is no impact of the load-impedance values at the sideband frequencies. The odd-mode instability only depends on the impedance terminations at the fundamental frequency and its harmonic terms, and can only be detected within the circuit unstable loop, instead of the antenna-connection terminals. The possible unstable modes are related with the eigenvectors of an outer tier conversion matrix accounting for the symmetry properties of the circuit topology. Under sufficient low-pass filtering of the amplifier output network, the analysis parameters can be limited to the magnitude and phase of the reflection coefficient at the fundamental frequency. This analysis involves a computationally efficient graphical technique to detect potential instabilities and a bifurcation-detection method to determine the instability boundaries in the Smith chart. The two main types of instability from periodic regime are considered, respectively associated with incommensurable and subharmonic oscillations. Results have been validated through pole-zero identification and experimental measurements.

A novel scheme for power-combined frequency tripler adopting 2N diodes is proposed in this work. Even mode coupled suspended substrate stripline is used to divide and recombine the input and output power. The circuits of the tripler are printed on both sides of the substrate, with N diodes on the front side and the other N diodes on the back side. The front diodes and back diodes are in anti-parallel connection, and DC biased separately to increase the bandwidth and power capacity. Three Q-band prototypes with two, four, and six diodes are fabricated and tested. The output compression powers at output frequency of 43.5 GHz for two/four/six-diode tripler are 9.2, 11, and 12 dBm, respectively. Power capacity is improved with the proposed tripler. Optimum DC bias is also discussed in this work, and it is found that it first increases with drive power, and then drops when large drive power applied because of the increased series resistance of the diode due to high junction temperature.

The design and characterization of a broadband 20–480 GHz continuously tuneable on-chip spectrometer based on non-linear transmission lines in 65-nm CMOS technology is presented. The design procedure of the sampler that detects the ultra-broadband signal from the transmitter in time and frequency domain is described in detail. It consists of a non-linear transmission line, a passive pulse differentiator and a high-speed sample and hold-circuit. The relevance of the layout of the Schottky diodes in the sampler with a maximum RC-cutoff frequency of 430 GHz is described. Time domain and frequency domain measurements are presented to characterize the 480 GHz sampler bandwidth as well as the 3.1 ps sampler rise time. A signal to noise ratio of 90 dB at 100 GHz, 70 dB at 200 GHz and more than 30 dB at 480 GHz is reached. Two implementation of the spectrometer with antennas are presented, one with an on-chip antenna and one in a hybrid package. The antenna-less on-chip implementation of the transmitter and sampler requires no external lenses and is miniaturized to an area of 3 mm2. Future applications include analysis of fluids in microfluidic packages or droplet analysis in bio-medical or pharmaceutical applications.

A new class of 3-dB impedance transforming directional couplers has been proposed in which the recently published coupled-line couplers, consisting of coupled-line sections having different electrical lengths, have been utilized. The main advantage of the proposed directional couplers is the possibility of obtaining high impedance transformation ratio, thus the known limiting condition of realizable impedance transformation in 3-dB couplers is overcome. Moreover, the proposed directional couplers feature significantly wider operational bandwidths. The theoretical analysis of the proposed impedance-transforming directional couplers has been shown and is fully supported by the measurements of the manufactured model operating in 0.5–1.5 GHz frequency range.

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDC ratio of 5.2 GHz/mW among all D-Band Si-based PAs.

This paper studies the variation effects of incident plane wave on shielded coaxial cables, using Branin's method, which is called the method of characteristics. That model can be directly used for the time- and frequency-domain analyses. Moreover, it had the advantage of being used without the need of setting the preconditions of the charges applied to its ends. This makes it easy to insert in circuit simulators, such as SPICE, SABER, and ESACAP. The results obtained under ESACAP were remarkably similar to other results, which reinforce the validity of the model. Finally, we will discuss the effects of the variation of the incident plane wave.

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

An envelope tracking (ET) radio frequency (RF) power amplifier (PA) is described intended for handsets and applications where a large number of PAs are needed. Instead of the usual split frequency architecture, a linear tracking charge pump structure is proposed. This allows the supply voltage of an RF PA to increase during the peaks of a high peak-to-average power ratio signal. When combined with an LDMOS RF PA, 42.9% efficiency was achieved at 31.3 dBm output power (POUT) when amplifying a 5 MHz bandwidth 8 dB PAPR 3rd Generation Partnership Project (3GPP) long term evolution signal. The first channel adjacent power ratio (ACPR) without digital pre-distortion was −30.4 dBc, meeting the 3GPP handset emission mask. The ACPR could be improved to −32.5 dBc by adopting a curved envelope shaping function at a reduced efficiency of 38.9%.

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

This paper presents the development of two dual-band radio-frequency (RF) harvesters optimized to convert far-field RF energy to DC voltage at very low received power. The first one is based on a patch antenna and the second on a dipole antenna. They are both implemented on a standard FR4 substrate with commercially off-the-shelf devices. The two RF harvesters provide a rectified voltage of 1 V for a combined power, respectively, of −19.5 dBm at 915 MHz, −25 dBm at 2.44 GHz, of −20 dBm at 915 MHz, and −15 dBm at 2.44 GHz. The remote powering of a clock consuming 1 V/5 µA is demonstrated, and the rectenna yields a power efficiency of 12%.

A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition.

In this paper, an amplitude shift keying (ASK) demodulator with 100% modulation depth is proposed. In order to achieve the higher power and wider reading range the designed ASK demodulator works in the ultra-high frequency. In this design, the average detector and voltage divider are used in order to define the appropriate threshold voltage level for the radio frequency input signal which leads to the accurate data detecting even at long distances between the tag and reader. In addition, for diminishing the power dissipation of the proposed demodulator, an enable input is used in the buffer and comparator. This circuit is simulated in 0.18 μm complementary metal–oxide–semiconductor (CMOS) technology with Cadence software. Its power dissipation and chip area are 3.9 nW and 0.0025 mm2, respectively.

This paper presents a novel experimental simulation of ramp-time current control with fuzzy bandwidth for wireless power transmission (WPT) systems. A fuzzy logic control algorithm was designed based on the structure of ramp-time current control in active power filters through simulation of ramp-time bandwidth variation to dynamically adjust the loop width of the ramp-time comparator. Ramp-time current control is the most suitable over other current control techniques and is thus selected for the experiment. Implementation of this approach prevents over-limit of switching frequency and enhances dynamic responses, resulting in long lifespan of power switches and smooth output for WPT systems. Finally, the hypothesis and simulation results were verified by analyzing the prototype model and experiment results.

In this paper, a novel design of generalized dual-band quadrature hybrid with arbitrary power division ratios is presented and investigated. This coupler has a simple structure and can cover a wide range of power division ratios at the two designated frequencies. Exact closed-form equations are derived based on the even–odd-mode analysis method. The proposed structure offers some special features, encompassing: (1) a generalized structure of some recently published papers; (2) isolation in vertical and horizontal directions in the two-dimensional structure; (3) the same sign of the output phase difference for the structure with horizontal isolation and the opposite sign for the structure with vertical isolation; (4) large power division ratios for both vertical and horizontal isolation conditions; (5) large frequency band ratio for both vertical and horizontal isolation conditions; (6) capability of the bandwidth improvement by exploiting coupled lines with small coupling coefficient. For demonstration, a microstrip implementation of a 16:1 dual-band coupler working on 2.45/5.8 GHz is developed. Consistency between simulation and measurement results justifies the proposed design method and its equations.

Microwave filters and multiplexers commonly employ tuning screws to compensate for small errors occurring during the fabrication process. Nevertheless, the use of tuning screws has some disadvantages, because the small gaps between the screws and the holes are prone to create unwanted effects when dealing with high-power signals, especially for space applications, and are also the source of potential radiation losses. In this paper, an alternative technique to correct manufacturing deviations is presented, in which tuning screws are replaced by fixed metal insertions. In this case, the correction is made by means of designing new insertion pieces that will be able to correct those small deviations. In order to find the dimensions of the new pieces, a space-mapping technique is applied. For verification purposes, the method has been applied over a circular-waveguide dual-mode filter and later over a manifold multiplexer containing the same type of filters. However, the technique can be directly extended to other types of waveguide filters and multiplexers where tuning screws are also employed.

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmax of 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

A novel, photonics-based scheme for the independent and simultaneous beam steering of multiple radio frequency signals at a wideband phased-array antenna is presented. As a proof of concept, a wavelength-selective switch (WSS) is employed both as a wavelength router to feed multiple antenna elements and as a tunable phase shifter to independently control the phase of each signal at any antenna element. In the experiment, two signals at 12.5 and 37.5 GHz are simultaneously fed to the four output ports of the WSS with independent and tunable phase shifts, emulating the independent steering of two signals in a four-element phased-array antenna. The results confirm the precision and flexibility of the proposed scheme, which can be realized both with bulk components or resorting to photonic integrated circuits, especially for wide-band applications. The architecture for a possible integrated implementation of the proposed solution is presented, employing a structure based on micro-ring resonator. Starting from these results, the feasibility of an integrated version of the presented architecture is also considered. The proposed photonic integrated circuit realizing the beam-forming network might be based on tunable true-time delay, as well as on phase shift through micro-ring resonators, and could be conveniently implemented with CMOS-compatible silicon technology.

Different types of bondwire interconnect for differential chip-to-antenna and single-ended chip-to-chip interfaces are investigated. Two differential compensation structures for various lengths of interconnects are designed and experimentally evaluated using dedicated transmit and receive radar modules operating across a 110–156 GHz band. Measurement results demonstrate that a fractional bandwidth of 7.5% and a minimum insertion loss of 0.2 dB can be achieved for differential interconnects as long as 0.8 mm. Design and measurement results of an extremely wideband low-loss single-ended chip-to-chip bondwire interconnect that features 1.5 dB bandwidth from DC to 170 GHz and insertion loss of less than 1 dB at 140 GHz are presented as well. The results show that the well-established wire-bonding techniques are still an attractive solution even beyond 100 GHz. Reproducibility and scalability of the proposed solutions are assessed as well.