This manuscript presents a millimeter-wave GaN high-power amplifier (HPA) intended for next generation inter-satellite links (ISLs). The proposed architecture achieves a fractional bandwidth wider than 18% in the V-band spectrum, to deliver a 10 Gbit/s throughput compatible with multi-thousand-km ISLs. Core of the HPA is the monolithic microwave integrated circuits (MMIC ) power amplifier which covers the whole 59–71 GHz band with high efficiency through innovative topologies and a cutting-edge gallium nitride on silicon carbide (GaN-on-SiC) process. The MMIC is then parallelized by means of a 1-to-8 splitter/combiner to obtain a V-band 10 W GaN HPA. Measurement results show a peak small-signal gain of 25.6 dB, 6.5% peak power-added efficiency, and a maximum P1dB of 40.3 dBm.

Electronic measurement systems in the THz frequency range are often bulky and expensive devices. While some compact single-chip systems operating in the high millimeter-wave frequency range have recently been published, compact measurement systems in the low THz frequency range are still rare. The emergence of new silicon-germanium (SiGe) semiconductor technologies allow the integration of system components, like oscillators, frequency multipliers, frequency dividers, and antennas, operating in the low THz frequency range, into a compact monolithic microwave integrated circuits (MMIC), which contains most components to implement a low-cost and compact frequency-modulated continuous-wave-radar transceiver. This article presents a single transceiver solution containing all necessary components. It introduces a $0.48\,\mathrm{THz}$ radar transceiver MMIC with a tuning range of $43\,\mathrm{GHz}$ and an output power of up to $-9.4\,\mathrm{dBm}$ in the SG13G3 $130\,\mathrm{nm}$ SiGe technology by IHP. The MMIC is complemented by a dielectric lens antenna design consisting of polytetrafluoroethylene, providing up to $39.3\,\mathrm d\mathrm B\mathrm i$ of directivity and half-power beam widths of 0.95∘ in transmit and receive direction. The suppression of clutter from unwanted targets deviating from antenna boresight more than 6∘ is higher than $24.6\,\mathrm d \mathrm B$ in E- and H-Plane.

This paper investigates the frequency response of load modulation networks for asymmetric Doherty power amplifiers (ADPA) with an output back-off power level larger than 6 dB and a power ratio of peak to main amplifier (N − 1) larger than 1. The influence of the main path impedance transformer (IT) on the Doherty impedances at main and peak path as well as on the ADPA's efficiency is analyzed. Scaling of the main IT's characteristic impedance via ξ indicates a maximum broadband matching for an input voltage Vin of ξ · Vin,max. By weighting the frequency- and ξ-dependent efficiency curves using a probability density function (PDF), an optimum is obtained for ξ = 1/N. To verify the theory, three ADPAs with different ξ-scaled ITs are designed, measured, and compared. For the design at 3.6 GHz, a gallium nitride (GaN) transistor is used. By means of the intrinsic node matching technique, matching at the current source plane is obtained. In laboratory measurements, the ADPA with ξ = 1/N achieves a power-added efficiency (PAE) of 63% at 42 dBm output power and a PDF-weighted average PAE of 38.8% within 400 MHz bandwidth for 8 dB peak-to-average power ratio. Comparison with similar state-of-the-art ADPAs in GaN technology shows highest PAE and operation power gain GP for center frequencies larger than 3.0 GHz.

For a fast scan-phase satellite radio antenna diversity system a noise correction method is presented for a significant improvement of audio availability at low signal-to-noise ratio (SNR) conditions. An error analysis of the level and phase detection within the diversity system in the presence of noise leads to a correction method based on a priori knowledge of the system's noise floor. This method is described and applied in a hardware example of a satellite digital audio radio services antenna diversity circuit for fast fading conditions. Test drives, which have been performed in real fading scenarios, are described and results are analyzed statistically. Simulations of the scan-phase antenna diversity system show higher signal amplitudes and availabilities. Measurement results of dislocated antennas as well as of a diversity antenna set on a single mounting position are presented. A comparison of a diversity system with noise correction, the same system without noise correction, and a single antenna system with each other is performed. Using this new method in fast multipath fading driving scenarios underneath dense foliage with a low SNR of the antenna signals, a reduction in audio mute time by one order of magnitude compared with single antenna systems is achieved with the diversity system.

A multi-octave receiver chain is presented for the use in a monolithic integrated vector network analyzer. The receiver exhibits a very wide frequency range of 1–32 GHz, where the gain meets the 3 dB-criterion. The differential receiver consists of an ultra-wideband low noise amplifier, an active mixer and an output buffer and exhibits a maximum conversion gain (CG) of 16.6 dB. The main design goal is a very flat CG over five octaves, which eases calibration of the monolithic integrated vector network analyzer. To realize variable gain functionality, without losing much input matching, an extended gain control circuit with additional feedback branch is shown. For the maximum gain level, a matching better than −10 dB is achieved between 1–28 GHz, and up to 30.5 GHz the matching is better than −8.4 dB. For both, the input matching and the gain of the LNA, the influence of the fabrication tolerances are investigated. A second gain control is implemented to improve isolation. The measured isolations between RF-to-LO and LO-to-RF are better than 30 dB and 60 dB, respectively. The LO-to-IF isolation is better than 35 dB. The noise figure of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output referred 1-dB-compression-point varies from 0.1 to 4.3 dBm from 2–32 GHz. The receiver draws a current of max. 66 mA at 3.3 V.

In this contribution, a design methodology for octave-bandwidth power amplifiers (PA) for 5G communication systems using surface mount dual-flat-no-lead packaged gallium-nitride high-electron-mobility transistor devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 75% fractional bandwidth for S- (1.9–4.2 GHz) and C-band (3.8–8.4 GHz) PAs. The harmonic impact is considered to improve the output power and efficiency of the PAs. Utilizing the characteristic behavior of the transistors leads to modified optimum fundamental load impedances for the low-frequency range, which have higher gain compared with high-frequency range, and minimize the influence of the higher harmonics. Continuous wave large-signal measurements of the realized S-Band PA show a power added efficiency (PAE) of more than 40% from 1.9–4.2 GHz and a flat power gain of 11 dB while achieving a saturated output power of 10 W. The measured performance of the C-Band PA demonstrates a delivered power between 3.5 and 5 W across the frequency range of 3.8–8.4 GHz. A flat power gain of around 9 ± 0.5 dB with 26–40% PAE is achieved.

A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside a T/R module. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chip T/R module frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

This paper presents an active Q-enhanced LC dual-band band-pass filtering approach using parallel synthesis techniques at X- and Ku-bands in 0.13 µm SiGe BiCMOS technology. By employing two independently tunable parallel LC-tanks with either in-phase and out-of-phase addition, independently tunable dual-band filtering is achieved. For higher out-of-band (OOB) attenuation, subtraction of the two 2nd-order bandpass filter is implemented. The two bands are independently tunable in terms of Q and center frequency. The dual-band filter at 9.7 GHz and 13.9 GHz achieves a normalized dynamic range of 165–154.5 dB.Hz with an OOB attenuation of >50 dB below 3 GHz. In between the two bands, the attenuation is 22 dB when the two passbands have 200 MHz bandwidth each. The total group delay is 0.8 ns and 1.9 ns for Q of 20 and 50, respectively. The filter achieves better OOB rejection with wider band channels at X- and Ku-bands compared with state of the art integrated filters. The filter consumes 115–130 mW of DC power. The core die area is 0.53 × 0.7 mm2.

An analytical method is proposed to reduce the memory effects and third-order intermodulation distortions for improving the linearity of wideband power amplifier (PA). An excellent linearity can be obtained by reducing the second-harmonic output power levels and reducing the envelope voltage components in the megahertz range. An improved wideband Chebyshev low-pass matching network including the bias network is analyzed and designed to validate the proposed method. The measured results indicate that a wideband high-efficiency linearized PA is realized from 1.35 to 2.45 GHz (fractional bandwidth = 58%) with power added efficiency of 60–78%, power gain of 10.8–12.3 dB, and output power of 40.0–41.2 dBm. For a 20 MHz LTE modulated signal, the adjacent channel leakage ratios (ACLRs) of the proposed PA with digital pre-distortion (DPD) linearization are −55.7 ~ −53.9 dBc across 1.5–2.4 GHz at an average output power of 32.4–33.6 dBm. For a 40 MHz two-carrier LTE modulated signal, the ACLRs of the proposed PA with DPD linearization are −51.1 ~ −48.2 dBc at an average output power of ~30.5 dBm in the frequency range from 1.5 GHz to 2.4 GHz.

An optically transparent and electrically small frequency modulation (FM) radio receiving antenna has been designed and fabricated from a mesh silver layer printed onto a glass substrate. The studied FM antenna consists of a transparent meandering monopole associated with a micrometric size MEtal Semiconductor Field Effect transistor. An optical transparency of 87% and a sheet resistance lower than 0.22 Ω/sq are obtained. The received signal strength indicator and the signal-to-noise ratio are both measured and compared with those of a commercial monopole antenna (a quarter-wave wire antenna). The transparent FM antenna exhibits similar radiofrequency performance with, in addition, a low visual impact.

We present a continuously tunable 52-to-67 GHz push–push dual-core voltage-controlled oscillator (VCO) in a 40 nm bulk complementary metal–oxide–semiconductor (CMOS) technology. The circuit is suitable for 60 GHz frequency-modulated-continuous-wave radar applications requiring a continuously tunable ultra-wide modulation bandwidth. The LC-tank inductor is used to couple the two VCO cores. The fundamental frequency of the VCO can be tuned from 26 to 33.5 GHz, which corresponds to a frequency tuning range of 25%. The second harmonic is extracted in a non-invasive way using a transformer. The primary side acts simultaneously as a second harmonic filter. The VCO achieves in measurement a low phase noise of −91.8 dBc/Hz at 1 MHz offset at 62 GHz and an output power of −20 dBm. The VCO including buffers dissipates in the dual-core operation mode 60 mA from a single 1.1 V supply and consumes a chip area of 0.58 mm2.

The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm2, is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10−12 at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.

With the increasing demand of millimeter-wave (MMW) communication, the performance of its frequency synthesizer has high requirements. In this paper, a multiple conversion mechanism, which used hybrid frequency synthesis technique is presented. Some key modules include linear frequency-modulated generator, agile, and low phase noise local oscillators (LOs), automatic gain control, receiver front-end circuit, and MMW LO circuits are discussed and simulated to verify correctness of the mechanism. The experimental results show that, spurious is better than −65 dBc, phase noise is no more than −80 dBc/Hz@1 kHz, and the maximum frequency-hopping time is <1.8 µs.