Research Article
A Nucleation Study of GaN Multifunctional Nanostructures
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- 01 February 2011, E12.7
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Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes
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- 01 February 2011, E10.7
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Fabrication of LED Based on III-V Nitride and its Applications
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- 01 February 2011, E1.6
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Moth-Eye Light-Emitting Diodes
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- 01 February 2011, E1.9
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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode
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- 01 February 2011, E11.41
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Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition
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- 01 February 2011, E12.4
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Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films
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- 01 February 2011, E3.16
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Strain-Induced Effects on the Resonant Tunnelling of Holes in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Heterostructures
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- 01 February 2011, E3.13
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Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
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- 01 February 2011, E3.43
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Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
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- 01 February 2011, E8.20
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Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells
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- 01 February 2011, E8.15
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Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method
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- 01 February 2011, E3.3
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Growth of GaN from elemental Gallium and Ammonia via Modified Sandwich Growth Technique
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- 01 February 2011, E11.38
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High Quality, Low Cost Continuous Poly-GaN Film on Si and Glass Substrates Produced by Spin Coating
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- 01 February 2011, E8.2
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P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE
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- 01 February 2011, E8.28
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