This paper presents a method to design the response threshold (RT) of energy selective surface (ESS) based on series LC circuits (SLC_based_ESS). A simple SLC_based_ESS structure composed of metal strips and PIN diodes is used for demonstration. According to our research, the RT is rarely related to the geometry parameters of unit cells. By contrast, the RT could be designed by introducing auxiliary structures (ASs) to SLC_based_ESS arrays. With the AS, the induced currents on diodes are enhanced and thus RT is greatly reduced. Prototypes are fabricated and measured under different power levels. The results agree well with simulations, proving an effective design of RT by the proposed method.