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Misfit strain relaxations of (101)-oriented ferroelectric PbTiO3/(La, Sr)(Al, Ta)O3 thin film systems
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- Journal:
- Journal of Materials Research / Volume 33 / Issue 24 / 28 December 2018
- Published online by Cambridge University Press:
- 28 December 2018, pp. 4156-4164
- Print publication:
- 28 December 2018
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- Article
- Export citation
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High-index ferroelectric thin films show excellent dielectricity, piezoelectricity and switching behaviors. Understanding the misfit strain relaxation behavior may prove beneficial to gaining insights into the high-quality growth of high-index ferroelectric films. In this study, ferroelectric PbTiO3 thin films were deposited on the (101)-oriented (La, Sr)(Al, Ta)O3 substrate by pulsed laser deposition and were investigated using (scanning) transmission electron microscopy. Two types of misfit dislocations with line directions of 〈111〉 and [010] were found at the interface. The 〈111〉 dislocation exhibited Burgers vectors of a[011] or
$a\left[ {0\bar{1}1} \right]$, while the [010] dislocation featured Burgers vectors of 
$a\left[ {\bar{1}01} \right]$. The former might be generated by gliding, and the latter by climbing. We propose that the misfit strain relaxation in this film system basically results from the formation of dislocations and the residual misfit strain is relaxed via the formation of 90° ac domains.
