The accuracy and precision of X-ray intensity measurements with a silicon drift detector (SDD) are compared with the same measurements performed on a wavelength dispersive spectrometer (WDS) for a variety of elements in a variety of materials. In cases of major (>0.10 mass fraction) and minor (>0.01 mass fraction) elements, the SDD is demonstrated to perform as well or better than the WDS. This is demonstrated both for simple cases in which the spectral peaks do not interfere (SRM-481, SRM-482, and SRM-479a), and for more difficult cases in which the spectral peaks have significant interferences (the Ba L/Ti K lines in a series of Ba/Ti glasses and minerals). We demonstrate that even in the case of significant interference high count SDD spectra are capable of accurately measuring Ti in glasses with Ba:Ti mass fraction ratios from 2.7:1 to 23.8:1. The results suggest that for many measurements wavelength spectrometry can be replaced with an SDD with improved accuracy and precision.

We present high-precision measurements of pure element stable isotope pairs that demonstrate mass has no influence on the backscattering of electrons at typical electron microprobe energies. The traditional prediction of average backscatter intensities in compounds was pragmatically based on elemental mass fractions. Our isotopic measurements establish that this approximation has no physical basis. We propose an alternative model to mass fraction averaging, based on the number of electrons or protons, termed “electron fraction,” which predicts backscatter yield better than mass fraction averaging. We also present an improved backscatter (electron loss) factor based on a modified electron fraction average for the ZAF atomic number correction that provides a significant analytical improvement, especially where large atomic number corrections are required.