2-D junction characterization by dual lens electron holography, scanning capacitance microscopy (SCM), and scanning spreading resistance microscopy (SSRM) on a variety of semiconductor devices is reported, including optical modulators, regular complementary metal-oxide-semiconductor (CMOS) devices, and SiGe hetero-junction bipolar transistors. In most cases these techniques provide comparable results, while in some instances one technique has advantages over the other and vice versa. Advantages and disadvantages of each technique are discussed.
