2 results
Techniques for locating isotopically labelled schistosomula of Schistosoma mansoni in host tissues for ultrastructural investigations
-
- Journal:
- Journal of Helminthology / Volume 60 / Issue 1 / March 1986
- Published online by Cambridge University Press:
- 18 November 2009, pp. 75-78
-
- Article
- Export citation
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e3
- Print publication:
- 1998
-
- Article
-
- You have access
- HTML
- Export citation
-
Extended defect reduction at the surface of GaN grown by lateral epitaxial overgrowth (LEO) on large-area GaN/Al2O3 wafers by low pressure MOCVD is demonstrated by atomic force microscopy. The overgrown GaN has a rectangular cross section with smooth (0001) and {11
0} facets. The density of mixed character threading dislocations at the surface of the LEO GaN is reduced by at least 3-4 orders of magnitude from that of bulk GaN. Dislocation-free GaN surfaces exhibit an anisotropic step structure that is attributed to the orientation dependence of the dangling bond density at the step edges.
0} facets. The density of mixed character threading dislocations at the surface of the LEO GaN is reduced by at least 3-4 orders of magnitude from that of bulk GaN. Dislocation-free GaN surfaces exhibit an anisotropic step structure that is attributed to the orientation dependence of the dangling bond density at the step edges.