14 results
Review of polarity determination and control of GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e1
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- 2004
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Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e12
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- 2000
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Preparation of Sapphire for High Quality III-Nitride Growth
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 2000
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The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e6
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- 1999
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Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e14
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- 1998
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Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e19
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- 1998
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The role of gaseous species in group-III nitride growth
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e45
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- 1997
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Surface Morphology and Structure of GaNxAs1−x
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e8
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- 1997
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Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e42
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- 1997
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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e26
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- 1997
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Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e33
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- 1997
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Evidence of 2D-3D transition during the first stages of GaN growth on AlN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e20
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- 1997
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Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e42
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- 1996
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Growth and Doping of AlGaN Alloys by ECR-assisted MBE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e10
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- 1996
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