Three-dimensional fluorescence microscopy is a key technology for inspecting biological samples, ranging from single cells to entire organisms. We recently proposed a novel approach called spatially modulated Selective Volume Illumination Microscopy (smSVIM) to suppress illumination artifacts and to reduce the required number of measurements using an LED source. Here, we discuss a new strategy based on smSVIM for imaging large transparent specimens or voluminous chemically cleared tissues. The strategy permits steady mounting of the sample, achieving uniform resolution over a large field of view thanks to the synchronized motion of the illumination lens and the camera rolling shutter. Aided by a tailored deconvolution method for image reconstruction, we demonstrate significant improvement of the resolution at different magnification using samples of varying sizes and spatial features.

Light-emitting diode (LED) illumination for fluorescence microscopy systems has come a long way since the turn of the century, when the LED sources available had low optical power and a limited range of wavelengths. While the benefits of LED technology were attractive, their limitations prevented large-scale adoption. Twenty years later, advances in the semi-conductor industry have eliminated many of those fundamental hurdles. Today, LED technology is rapidly replacing the lamps used in microscopy and fluorescence imaging, even for applications on the extreme ends of the light microscopy spectrum. This article describes the latest advances in illumination for fluorescence imaging, from near-UV to near-IR fluorophores. Case studies demonstrate the new X-Cite® NOVEM™ as successful replacements for traditional arc lamps in calcium imaging applications, producing equivalent results with the convenience of LEDs. For its usefulness to the microscopy community, the X-Cite NOVEM system was awarded the prestigious 2021 Microscopy Today Innovation Award.

The ability to characterize recombination and carrier trapping processes in group-III nitride-based nanowires is vital to further improvements in their overall efficiencies. While advances in scanning transmission electron microscope (STEM)-based cathodoluminescence (CL) have offered some insight into nanowire behavior, inconsistencies in nanowire emission along with CL detector limitations have resulted in the incomplete understanding in nanowire emission processes. Here, two nanowire heterostructures were explored with STEM-CL: a polarization-graded AlGaN nanowire light-emitting diode (LED) with a GaN quantum disk and a polarization-graded AlGaN nanowire with three different InGaN quantum disks. Most nanowires explored in this study did not emit. For the wires that did emit in both structures, they exhibited asymmetrical emission consistent with the polarization-induced electric fields in the barrier regions of the nano-LEDs. In the AlGaN/InGaN sample, two of the quantum disks exhibited no emission potentially due to the three-dimensional landscape of the sample or due to limitations in the CL detection.

Geometrid moths occurring in late autumn and early spring in temperate forest habitats are often harmful defoliators of deciduous stands. Their populations can cause locally cyclic outbreaks and thus preventive monitoring actions have been developed, mainly based on pheromone attraction of males. Females are mostly flightless with reduced or lost wings and reduced senses associated with flying. Males are standard flyers with well-developed eyes and must be able to deal with rapidly changing light conditions during their activity. Although such differences indicate sex-biased differences in reactions to light, this has been insufficiently tested. In conditions of an experimental arena and using light-emitting diodes, we tested the different reactions of the sexes for nine species to precisely defined short segments of the electromagnetic spectrum in the range 360–660 nm. Across all species, males preferred shorter wavelengths up to 500 nm, while females were nonselective and generally less active. The sexes differed by eye size and body mass, with males having significantly larger eyes and lower body mass. Between brachypterous and apterous females, the former had larger eye size, while body mass differences were statistically insignificant. There were differences between the sexes in move-to-light reactions and changes in eye size and body mass in line with wing reduction. While males preferred a relatively distinct range of shorter wavelengths, a method of attraction to lights with distinct narrow spectra could be used markedly to enhance the established methods of forest pest monitoring, either alone or in combination with chemical male attraction.

Translucent, polycrystalline YAG:Ce disks with 0.1, 0.5, and 1 mol% concentrations of cerium as well as different resulting thicknesses of 0.5 and 0.8 mm were prepared by reaction sintering of yttria, alumina, and cerium oxide under vacuum at a temperature of 1800 °C. The obtained samples displayed a microstructure with a Y3Al5O12 main phase interrupted by an intended scattering phase of alumina. Furthermore, the total forward transmittance was between 75 and 78% with the typical absorption bands of cerium at wavelengths of 330 and 460 nm. Phosphor conversion light-emitting diodes (LEDs) with 0.88 W power dissipation have been prepared from these YAG:Ce ceramic disks as converters and blue 455 nm LED chips for excitation. Their color coordinates in the CIE (Commission Internationale de l’Eclairage) diagram determined by spectral photometry depend on the concentration of the Ce dopant and the ceramic converter thickness. The highest luminous flux of 276 lm with an efficiency of 76.6 lm/W was measured for a converter with 0.5 mol% dopant concentration and 0.8 mm thickness emitting a yellowish white light.

Light presents one of the considerable factors after nutrition and genetics in bird health and welfare. Therefore poultry producers are continuously looking for new and innovative tools to apply in poultry production in order to economise rearing costs and save rising energy concerns. Changes in the light regimen, intensity, duration and wavelength have a profound effect on the behaviour, physiology and production performance of poultry. Moreover, bird welfare is a major controversial issue and the adaptation of a lighting programme with a proper lighting tool could impart a possible solution for the betterment of poultry welfare. Light emitting diodes (LED), due to their various beneficial characteristics over traditional incandescent and fluorescent bulbs; are gaining popularity with poultry farmers. Therefore, it can be suggested that the use of LED in poultry housing is advantageous due to its energy efficiency and long life as compared to the conventional light sources, and with the added benefit of its various colours and higher productivity.

In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p-GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n-GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.

Using double silent substitution, it is possible to generate L-cone and M-cone isolating electroretinograms (ERGs) on a CRT. A major limitation of the technique is that the depth of modulation of cone classes is limited by the restricted luminance of the phosphors and their spectral overlap. To address this problem we have ported the technique to a four-color LED Ganzfeld stimulus (Diagnosis ColorDome). This allows higher retinal illuminances, higher contrasts, and triple silent substitution. With careful control over the retinal area stimulated, we show that the same data can be recorded from both CRT and LED stimuli when luminance, size and cone contrast are kept constant. Importantly, the different temporal profiles of the two devices do not influence the ERG amplitude and phase plots. We present data over a much wider range of luminances (up to about 10000 trolands) and contrasts with the LED stimulator than previously reported with CRT screens. We conclude that the close resemblance between data obtained with an LED stimulator and with a CRT screen indicate that the differences have a purely physiological origin.

Thick AlGaN layers and GaN/AlGaN heterostructures were grown by low pressure MOCVD on (0001) sapphire substrates utilizing a low temperature AlGaN buffer layer. The distribution of Al in the thick AlGaN layers was observed to be non-uniform as a function of depth. The Al content gradually increases from the substrate towards the epilayer surface. Moreover, fluctuations of Al content are also noticeable. The saturation of impurity-related emission with increasing current density was observed in EL spectra of LEDs consisting of AlGaN/GaN/AlGaN DH sandwiched by a 2 μm-thick bottom layer of GaN:Si and 0.5 μm-thick layer of GaN:Mg. The dominant near-band edge emission of the GaN active layer was found to be strongly absorbed in the thick bottom layer. Utilizing a 2 μm-thick AlGaN bottom layer instead of the GaN one allowed the absorption edge to be shifted towards higher energies. A single peak at 362 nm with FWHM of 14 nm was observed in this type of LED. Luminescence properties of various types of heterostructures are also discussed.

GaN based homo- and heterotype LED's have been fabricated and characterized which emit in the blue and ultra-violet part of the spectral range. Complete epitaxial LED layer sequences with different recombination zones have been grown using MOVPE as well as MBE. Subsequent to the material growth, chemically-assisted ion-beam etching and contact metallization are utilized to achieve full LED devices. MBE-grown homotype LED's reveal a peak in the output light spectrum at a wavelength of 372 nm with a linewidth being as narrow as 12 nm. GaN/InGaN LED's grown by MOVPE show visible single peak emission with linewidths of 23 nm. The optical output power as measured in a calibrated Ulbricht sphere is in the 1 μW regime.

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts. The EL peak wavelength was from 455 nm to 504 nm.