3 results
Strain compensation by heavy boron doping in Si1–xGex layers grown by solid phase epitaxy
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- Journal:
- Journal of Materials Research / Volume 12 / Issue 7 / July 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1698-1705
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- July 1997
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Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e33
- Print publication:
- 1997
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High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures
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- Journal:
- Advances in X-ray Analysis / Volume 39 / 1995
- Published online by Cambridge University Press:
- 06 March 2019, pp. 439-448
- Print publication:
- 1995
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