Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics
Research Article
The Influence of Fluorine on Various Mos Devices
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- 10 February 2011, 589
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Gate-Prior-To-Isolation Cmos-Technology with Through-The-Gate-Implanted Ultra-Thin Gate Oxides
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- Published online by Cambridge University Press:
- 10 February 2011, 597
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High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials
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- Published online by Cambridge University Press:
- 10 February 2011, 603
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