Symposium CC – Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory
Articles
High-Performance MIM Capacitors based on TiO2/ZrO2/TiO2 and AlO-doped TiO2/ZrO2/TiO2 Dielectric Stacks for DRAM Applications
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- Published online by Cambridge University Press:
- 27 June 2013, mrss13-1561-cc05-07
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Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO3 Based High-k Metal Gate Devices
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- 28 June 2013, mrss13-1561-cc05-08
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Kinetics of Frenkel Defect Formation in TiO2 from First Principles
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- Published online by Cambridge University Press:
- 21 August 2013, mrss13-1561-cc03-03
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Improved Nitridation of GeO2 Interfacial layer for Ge Gate Stack Technology
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- 17 July 2013, mrss13-1561-cc04-10
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High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET
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- 27 June 2013, mrss13-1561-cc02-08
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Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors
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- 26 June 2013, mrss13-1561-cc04-07
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Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs
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- 28 June 2013, mrss13-1561-cc01-10
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