In situ X-ray absorption near edge structure (XANES) measurements were conducted to elucidate the chemical states of Co and Ni catalysts during single-walled carbon nanotube (SWCNT) growth via chemical vapor deposition (CVD). XANES spectra indicated that both Co and Ni catalysts partially oxidized before heating. It was found that Co catalysts formed carbides during the SWCNT growth. In contrast, Ni catalysts remained metallic state even after the SWCNT growth had begun. These results indicate that during SWCNT growth, carbon atoms dissolve into Co particles, whereas for Ni particles, they diffuse on the surface region. It was concluded that the growth mechanisms of SWCNTs formed by CVD differed for either Co or Ni catalyst.

Zirconium has attracted a lot of attention recently due to its distinctive properties that make it suitable for extensive applications in the nuclear power and chemical industry. Zirconium and its alloys are undergoing long-term development as promising materials for the nuclear industry and power engineering. Recently, advanced Zr-based alloys are aimed for service in more severe operating conditions such as higher burn-up, increased operation temperature, and high-PH operation. In this work we observe the temperature dependence of Zr50Nb50, Zr78Nb22, Zr78Nb19Co3 and Zr50Nb49Sn1. It was observed that ternary additions with small atomic percentages of Co and Sn have significant impact on Zr-Nb alloy; and their elastic properties showed a possible enhancement on high temperature applications and physical strength.

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.

In this study, the microstructural characterization of a superplastic Zn-Al-Ag alloy (72, 24, and 4 in % wt. respectively) by using spectroscopy analysis techniques was obtained. The X-Ray Fluorescence (XRF), Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD) techniques were used. The main objective of this alloy development is to improve its super-plasticity property and increases its corrosion resistance in acid rain environments. The effect of small grain microstructure of the alloy obtained at the end of the fabrication process improved the super-plasticity behavior. The result of the fabrication process was observed by the characterization of crystallographic phases (morphology, size and distribution) and the chemical composition. The obtained results by XRF shown that Zn was the higher proportion element, in addition the Ag (4% wt.) addition to Zn-Al base alloy improves the grain refinement, as was observed by the SEM characterization. The Ag3Al and AgZn3 intermetallic compounds homogeneously dispersed were observed in the microstructure of the Zn-Al solid solution phase. The size grain observed after the rolling process was less than 10 µm, and it was associated to one of the main characteristics of super-plasticity properties. The XRD analysis results corroborated the present phases in the alloy, as was identified with the SEM and EDS characterization.

The objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.

Multilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

Graphene based devices have already proven to be extremely sensitive and very useful in a wide spectrum of bioelectronics research. In the manuscript we describe a method to fabricate arrays of graphene-based probes, requiring minimal number of fabrication steps, while maintaining overall device functionality. These polyimide-based probes are approximately 6 µm thick, therefore ultraflexible, yet robust and stable. Devices, such as graphene field effect transistors (GFETs) and graphene multielectrode arrays (GMEAs) have been designed, fabricated and tested for their performance. The flexible GFETs exhibit sensitivity, i.e. transconductance up to 700 µS/V, which an order of magnitude larger compared to typical silicon transistors. Multiple probe per wafer design allows us to fabricate different kinds of devices on one 4-inch wafer, consequently increasing a possible range of applications from e.g. retinal to cortical neuroprosthetics.

BiFeO3 (BFO) is the most studied room temperature multiferroic compound. In this work we demonstrate a template assisted growth process through which the growth strain is controlled to achieve required phase of BFO. Growth of (∼20nm) fully strained tetragonal (T), rhombohedral (R) and mixed phase of T and R of Bismuth ferrite (BiFeO3) was achieved by varying the thickness of the template layer. The different phases were confirmed by using high resolution x-ray diffractions studies. The conductivity map of all the three phases were carried out using an atomic force microscope operating in conductive mode. Tip induced surface defect migration within a given grain was observed in pure phases and the conductivity map confirmed the same. The room temperature resistivity is found to be decreasing systematically from 1.1×106 Ωm , 935×105 Ωm and 1.16×104 Ωm respectively for tetragonal, mixed phase and rhombohedral phase BFO. In the case of mixed phase both the nano- scale and macroscopic leakage current studies show low conductivity, which could be due to the increased pinning sites that increases the energy barrier for the defect migration. The local nano-scale measurements and conductivity mapping corroborates well with the macroscopic studies.

Development of materials and engineering solutions in fusion technologies supports the use of high-Z elements as Plasma Facing Component to avoid tritium deposition with carbon. Tungsten is among the most promising candidates for these applications. Therefore, research in this area has gained increasing attention. It is then important to assess the structure and strain of thick W coatings as those parameters influence the adhesion on various substrates. This paper describes the status of investigations of strain in thick films of tungsten. Glancing incidence X-ray diffraction can be used to study W polycrystalline textured films, obtain information about their structure, and establish a depth profiling of residual strain. The actual strain at different depths within the coating can be extracted from the measured averaged strain using the inverse Laplace transform method applied to a set of measurements at different angles of the impinging X-ray beam. Results of measurements on films of different thicknesses are discussed.

Zirconolite glass-ceramics are being developed as potential wasteforms for the disposition of Pu wastes in the UK. Previous studies utilised a variety of surrogates whilst this work uses both cold-press and sinter and hot isostatic press methods to validate the wasteform with PuO2. A cold press and sinter sample was fabricated as part of a validation study for plutonium incorporation in hot isostatically pressed (HIPed) wasteforms. The results confirmed the cold-press and sinter, achieved successful waste incorporation and a microstructure and phase assemblage that was in agreement with those expected of a HIPed equivalent. A HIP sample was fabricated of the same composition and characterised by SEM and XRD. Results were in agreement with the sintered sample and achieved complete waste incorporation into the glass-ceramic wasteform. These samples have demonstrated successful incorporation of PuO2 into glass-ceramic HIPed wasteforms proposed for processing Pu-based waste-streams in the UK.

Spiking Neural Networks propose to mimic nature’s way of recognizing patterns and making decisions in a fuzzy manner. To develop such networks in hardware, a highly manufacturable technology is required. We have proposed a silicon-based leaky integrate and fire (LIF) neuron, on a sufficiently matured 32 nm CMOS silicon-on-insulator (SOI) technology. The floating body effect of the partially depleted (PD) SOI transistor is used to store “holes” generated by impact ionization in the floating body, which performs the “integrate” function. Recombination or equivalent hole loss mimics the “leak” functions. The “hole” storage reduces the source barrier to increase the transistor current. Upon reaching a threshold current level, an external circuit records a “firing” event and resets the SOI MOSFET by draining all the stored holes. In terms of application, the neuron is able to show classification problems with reasonable accuracy. We looked at the effect of scaling experimentally. Channel length scaling reduces voltage for impact ionization and enables sharper impact ionization producing significant designability of the neuron. A circuit equivalence is also demonstrated to understand the dynamics qualitatively. Three distinct regimes are observed during integration based on different hole leakage mechanism.

Transition metal dichalcogenide (TMDC) monolayers like MoS2 are promising materials for future electronic applications. Large-area monolayer MoS2 samples for these applications are typically synthesized by chemical vapor deposition (CVD) using MoO3 reactants and gas-phase sulfur precursors. Recent experimental studies have greatly improved our understanding of reaction pathways in the CVD growth process. However, atomic mechanisms of sulfidation process remain to be fully elucidated. In this work, we present quantum-mechanically informed and validated reactive molecular dynamics (RMD) simulations for CVD synthesis of MoS2 layers using S2 precursors. Our RMD simulations clarify atomic-level reaction pathways for the sulfidation of MoO3 surfaces by S2, which is a critical reaction step for CVD synthesis of MoS2 layers. These results provide a better understanding of the sulfidation process for the scalable synthesis of defect-free MoS2 and other TMDC materials.

The ability to interface electronic materials with the peripheral nervous system is required for stimulation and monitoring of neural signals. Thus, the design and engineering of robust neural interfaces that maintain material-tissue contact in the presence of material or tissue micromotion offer the potential to conduct novel measurements and develop future therapies that require chronic interface with the peripheral nervous system. However, such remains an open challenge given the constraints of existing materials sets and manufacturing approaches for design and fabrication of neural interfaces. Here, we investigated the potential to leverage a rapid prototyping approach for the design and fabrication of nerve cuffs that contain supporting features to mechanically stabilize the interaction between cuff electrodes and peripheral nerve. A hybrid 3D printing and robotic-embedding (i.e., pick-and-place) system was used to design and fabricate silicone nerve cuffs (800 µm diameter) containing conforming platinum (Pt) electrodes. We demonstrate that the electrical impedance of the cuff electrodes can be reduced by deposition of the conducting polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) on cuff electrodes via a post-processing electropolymerization technique. The computer-aided design and manufacturing approach was also used to design and integrate supporting features to the cuff that mechanically stabilize the interface between the cuff electrodes and the peripheral nerve. Both ‘self-locking’ and suture-assisted locking mechanisms are demonstrated based on the principle of making geometric alterations to the cuff opening via 3D printing. Ultimately, this work shows 3D printing offers considerable opportunity to integrate supporting features, and potentially even novel electronic materials, into nerve cuffs that can support the design and engineering of next generation neural interfaces.

Synthesis of functional noble metal nanoparticles (AuNPs, AgNPs, and PdNPs) and its multi-metallic analogues have received greater attentions for selective applications. The selective applications of the these nanoparticles essentially requires the processability of as synthesized nanoparticles in the medium of desired polarity index that manifest the potential exploration of nanomaterial based design in targeted area. The use of conventional reducing and stabilizing agents during routine synthesis of such nanoparticles are not suitable with the system of practical significance and require additional reagents that limit the optimum activity of nanomaterial in targeted design. According there is a challenging issue in the synthesis of noble metal nanoparticles that allow the controlled synthesis of such nanoparticles involving same starting material with option to control the processability of as generated nanomaterial in the system of desired polarity index. The present report is focused on such challenging issues. We have found that 3-aminopropyltrimethoxysilane (3-APTMS) capped noble metal cations can be precisely converted into respective monometallic, bimetallic and trimetallic analogues and can be made processable in water at one end having controlled option to reversed the processability of the same in the toluene as a function of small organic reducing agents. The organic reducing agents not only convert 3-APTMS-capped noble cations into respective nanoparticles but also control the processability of the as generated nanoparticles in the systems of desired polarity index. The similar process also allows the synthesis of function bimetallic and tri-metallic nanoparticles. The role of cyclohexanone, formaldehyde and acetone in the presence of 3-APTMS is reported.

A new quantum dot synthesis method based on metallic-block copolymer precursors was developed. The synthesis produced CdS QDs assembled into chains. This method provides a new model for the study of 1D QD chains to determine its effect on charge transport and optoelectronic coupling. This synthesis method was readily extended to other semiconductor materials including PbS and perovskites producing QDs of various shapes. It evidenced further promise of this synthesis method to assist in the assembly, shape and size control of various nanomaterials

We report a 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) solution-processed high-voltage organic thin film transistor (HVOTFT) with a large breakdown voltage of |VDS| > 450 V, a three-fold increase from previous results. An offset channel architecture and an organosilane-based self-assembled monolayer (SAM) treatment were used to achieve large breakdown voltages. Solution-processed HVOTFTs will enable novel high-voltage and flexible applications. Reliability of the HVOTFT under high-field stress was studied in the context of threshold and onset to conduction voltages.

Continued advances in digital design software and 3D printing methods enable innovative approaches in the development of new educational tools for laboratory-based STEM (science, technology, engineering and mathematics) learning. The decreasing cost of 3D printing equipment and greater access provided by university fabrication centers afford unique opportunities for educators to transcend the limitations of conventional modes of student engagement with analytical instrumentation. This work shares successful efforts at Wabash College to integrate user-friendly and inexpensive 3D printed instruments kits into introductory STEM coursework. The laboratory kits and activities described provide new tools for engaging students in the exploration of instrument design and performance. These experiences provide effective ways to assist active-learners in discovering the technology and fundamental principles of analysis and deliberately confront the “black box” perception of instrumentation.

In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.

We have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifting of the hole spin and parity sublevels. This symmetry breaking, particularly for positively charged centers, shortens the radiative lifetime of CdSe nanocrystals even at room temperature, in qualitative agreement with the increase in PL efficiency observed in CdSe nanocrystals doped with positive Ag charge centers [A. Sahu et.al., Nano Lett. 12, 2587, (2012)]. The effect of the charged center on the photoluminescence and the absorption spectra is shown, with and without the presence of compensating charges on the nanocrystal surface. While spectra of individual nanocrystals are expected to shift and broaden with the introduction of a charged center, configuration averaging and inhomogeneous broadening are shown to wash out these effects. The presence of compensating charges at the NC surface also serves to stabilize the band edge transition energies relative to NCs with no charge centers.

Metal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.