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Co-doping effect on the electronic properties of nonstoichiometric tin telluride

Published online by Cambridge University Press:  03 June 2019

Dana Ben-Ayoun  and
Yaniv Gelbstein
Dana Ben-Ayoun*
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva84105, Israel
Yaniv Gelbstein
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva84105, Israel
*
*Correspondence:[email protected]
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Abstract

The search for nontoxic compositions in the thermoelectric field has motivated many researches to find alternatives to the toxic Pb-based systems, capable of reaching their high conversion efficiency. SnTe is gaining much attention during the past years due to its superior eco-friendly character, and its very similar crystal and band structure to that of PbTe. These makes SnTe a promising compound with great potential to answer the demand and use as a fair thermoelectric candidate. Most of the recently published studies mainly discuss the stoichiometric SnTe alloy. Only several focus on the effect of introducing excess tin/tellurium to the system. For that reason, this research aims to investigate in detail the nonstoichiometric SnxTe1-x co-doped by bismuth and indium/iodine, in an attempt to optimize the electronic properties.

Keywords

thermoelectricityelectrical properties
Type
Articles
Information
MRS Advances , Volume 4 , Issue 30: Electronics and Photonics , 2019 , pp. 1699 - 1707
Copyright
Copyright © Materials Research Society 2019 

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