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Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

Published online by Cambridge University Press:  17 March 2004

K. Tillmann ,
N. Hüging ,
H. Trinkaus  and
M. Luysberg
K. Tillmann
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
N. Hüging
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Trinkaus
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
M. Luysberg
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p/μ of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p/μ values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.

Keywords

diffraction contrast imagingimage similationscrack-shaped cavitiestransmission electron microscopysiliconhelium implantation
Type
Quantitative Transmission Electron Microscopy at Jülich, Germany
Information
Microscopy and Microanalysis , Volume 10 , Issue 2 , April 2004 , pp. 199 - 214
Copyright
© 2004 Microscopy Society of America

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References

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