Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T04:42:19.175Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  28 September 2007

Suk Chung ,
David J. Smith  and
Martha R. McCartney
Suk Chung
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA
David J. Smith
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Martha R. McCartney
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Get access

Abstract

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Keywords

electron holographymean inner potentialinelastic mean-free-pathAlAsGaAs
Type
MATERIALS APPLICATIONS
Information
Microscopy and Microanalysis , Volume 13 , Issue 5 , October 2007 , pp. 329 - 335
Copyright
© 2007 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bethe, H.A. (1928). Theory of the diffraction of electrons in crystals. Ann Phys (Leipzig) 87, 55–128.Google Scholar
de Ruijter, W.J. & Weiss, J.K. (1993). Detection limits in quantitative off-axis electron holography. Ultramicroscopy 50, 269–283.Google Scholar
Doyle, P. & Turner, P.S. (1968). Relativistic Hartree–Fock X-ray and electron scattering factors. Acta Crystallogr A 24, 390–397.Google Scholar
Gajdardziska-Josifovska, M. & Carim, A.H. (1999). Application of electron holography. In Introduction of Electron Holography, Völkl, E., Allard, L.F. & Joy, D.C. (Eds.), pp. 267–293. New York: Kluwer.
Gajdardziska-Josifovska, M., McCartney, M.R., De Ruijter, W.J., Smith, D.J., Weiss, J.K. & Zuo, J.M. (1993). Accurate measurements of mean inner potential of crystal wedges using digital electron holograms. Ultramicroscopy 50, 285–299.Google Scholar
Han, M.G., Li, J., Xie, Q., Fejes, P., Conner, J., Taylor, B. & McCartney, M.R. (2006). Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices. Microsc Microanal 12, 295–301.Google Scholar
Kruse, P., Rosenauer, A. & Gerthsen, D (2003). Determination of the mean inner potential in III–V semiconductors by electron holography. Ultramicroscopy 96, 11–16.Google Scholar
Kruse, P., Schowalter, M., Lamoen, D., Rosenauer, A. & Gerthsen, D. (2006). Determination of the mean inner potential in III–V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy 106, 105–113.Google Scholar
Lenk, A., Lichte, H. & Muehle, U. (2005). 2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation. J Electron Microsc 54, 351–359.Google Scholar
Li, J., McCartney, M.R., Dunin-Borkowski, R.E. & Smith, D.J. (1999). Determination of mean inner potential of germanium using off-axis electron holography. Acta Crystallogr A 55, 652–658.Google Scholar
McCartney, M.R. (2005). Characterization of charging in semiconductor device materials by electron holography. J Electron Microsc 54, 239–242.Google Scholar
McCartney, M.R. & Gajdardziska-Josifovska, M. (1994). Absolute measurement of normalized thickness, t/λi, from off-axis electron holography. Ultramicroscopy 53, 283–289.Google Scholar
McCartney, M.R., Smith, D.J., Farrow, R.F.C. & Marks, R.F. (1997). Off-axis electron holography of epitaxial FePt films. J Appl Phys 82, 2461–2465.Google Scholar
O'Keeffe, M. & Spence, J.C.H. (1994). On the average Coulomb potential (Σ0) and constraints on the electron density in crystals. Acta Crystallogr A 50, 33–45.Google Scholar
Radi, G. (1970). Complex lattice potentials in electron diffraction calculated for a number of crystals. Acta Crystallogr A 26, 41–56.Google Scholar
Rau, W.D., Schwander, P., Baumann, F.H., Höppner, W. & Ourmazd, A. (1999). Two-dimensional mapping of the electrostatic potential in transistors by electron holography. Phys Rev Lett 82, 2614–2617.Google Scholar
Reimer, L. (1991). Transmission Electron Microscopy. Berlin: Springer.
Spence, J.C.H. (1993). On the accurate measurement of structure-factor amplitudes and phases by electron diffraction. Acta Crystallogr A 49, 231–260.Google Scholar
Wang, Y.C., Chou, T.M., Libera, M. & Kelly, T.F. (1997). Transmission electron holography of silicon nanospheres with surface oxide layers. Appl Phys Lett 70, 1296–1298.Google Scholar
Williams, D.B. & Carter, C.B. (1996). Transmission Electron Microscopy. New York: Plenum Press.
Zuo, J.M. (2007). CBED simulation program. Available at http://cbed.mse.uiuc.edu/index.html.