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Accurate Measurements of Valence Electron Distribution and Interfacial Lattice Displacement Using Quantitative Electron Diffraction

Published online by Cambridge University Press:  16 September 2003

Yimei Zhu ,
Lijun Wu  and
J. Tafto
Yimei Zhu
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973, USA
Lijun Wu
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973, USA
J. Tafto
Affiliation:
Department of Physics, University of Oslo, Blindern, Norway
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Abstract

We developed a novel electron-diffraction technique by focusing a small probe above (or below) the sample in an electron microscope to measure charge density and lattice displacement in technologically important materials. The method features the simultaneous acquisition of shadow images within many Bragg reflections, resulting in parallel recording of dark-field images (PARODI). Because it couples diffraction with images, it is thus suitable for studying crystals as well as their defects. We used this technique to accurately locate the charge-carrying holes in superconducting crystals, and to determine displacement vectors across planar faults by comparing the experiments with calculations, and by using fitting and error analyses. Examples are given for complex YBa2Cu3O7 and Bi2Sr2CaCu2O8+δ oxides and the newly discovered MgB2 superconductor.

Keywords

charge densitycharge distributioninterfacial displacementquantitative electron diffractionYBa2Cu3O7Bi2Sr2CaCu2O8+δMgB2superconductors
Type
Research Article
Information
Microscopy and Microanalysis , Volume 9 , Issue 5 , October 2003 , pp. 442 - 456
Copyright
© 2003 Microscopy Society of America

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