Secondary electron (SE) doping contrast in the scanning electron microscope is correlated with Fermi level pinned surfaces of Si samples prepared using HF-based wet-chemical treatment or focused ion beam (FIB) micromachining en route to quantitative dopant profiling. Using energy-resolved SE imaging techniques and finite-element analyses of surface states and surface junction potentials, we clarified the surface band-bending effects post-NH4F-treatment, consistent with brighter p-contrast from degenerately doped (>1019 cm−3) regions. In general, SE spectromicroscopy scan measurements unambiguously indicated heavy suppression of patch fields, while the empirical discovery of scan frequency-modulated contrast inversion due to Chee et al. [Springer Proceedings in Physics, 120, pp. 407–410 (2008)] is ascribable to competing fixed oxide charge and dynamic charge injection phenomena (particularly at dwell times >29 μs). Leveraging numerical simulations of electric potentials and variable-voltage experimental data, the theoretical model based on amorphization damage-mediated Fermi level pinning is elucidated for Ga+ FIB-processed site-specific doping contrast on patch field-free surfaces. This work successfully argues against the notion that doping contrast ultimately or exclusively entails patch fields or adventitious metal–semiconductor contacts.

This paper presents a new method for creating and monitoring controlled localized negatively charged regions inside insulators with a scanning electron microscope (SEM). A localized buried charged region is created and observed close to the point where a high voltage primary beam (10 kV) strikes a metal–insulator–silicon specimen. The amount of buried charge within the insulator at any given moment can be dynamically monitored by detecting the appearance of a second peak in the secondary electron (SE) energy spectrum. SE energy spectral signals were obtained through the use of a compact high signal-to-noise energy analyzer attachment that was fitted on to the SEM specimen stage. An electrostatic model, together with Monte Carlo simulations, is presented to explain how the SE charge contrast effect functions. This model is then experimentally confirmed by using the SE energy spectral signal induced by a gallium ion beam inside a dual focused ion beam-SEM instrument.

Dimensional measurements from secondary electron (SE) images were compared with those from backscattered electron (BSE) and low-loss electron (LLE) images. With the commonly used 50% threshold criterion, the lines consistently appeared larger in the SE images. As the images were acquired simultaneously by an instrument with the capability to operate detectors for both signals at the same time, the differences cannot be explained by the assumption that contamination or drift between images affected the SE, BSE, or LLE images differently. Simulations with JMONSEL, an electron microscope simulator, indicate that the nanometer-scale differences observed on this sample can be explained by the different convolution effects of a beam with finite size on signals with different symmetry (the SE signal’s characteristic peak versus the BSE or LLE signal’s characteristic step). This effect is too small to explain the >100 nm discrepancies that were observed in earlier work on different samples. Additional modeling indicates that those discrepancies can be explained by the much larger sidewall angles of the earlier samples, coupled with the different response of SE versus BSE/LLE profiles to such wall angles.

The scanning electron microscope provides a platform for subnanometer resolution characterization of material morphology with excellent topographic and chemical contrast dependent on the used detectors. For imaging applications, the predominantly utilized signals are secondary electrons (SEs) and backscattered electrons (BSEs) that are emitted from the sample surface. Recent advances in detector technology beyond the traditional Everhart–Thornley geometry have enabled the simultaneous acquisition and discrimination of SE and BSE signals. This study demonstrates the imaging capabilities of a recently introduced new detector system that consists of the combination of two in-lens (I-L) detectors and one in-column (I-C) detector. Coupled with biasing the sample stage to reduce electron–specimen interaction volumes, this trinity of detector geometry allows simultaneous acquisition of signals to distinguish chemical contrast from topographical changes of the sample, including the identification of surface contamination. The I-C detector provides 4× improved topography, whereas the I-L detector closest to the sample offers excellent simultaneous chemical contrast imaging while not limiting the minimization of working distance to obtain optimal lateral resolution. Imaging capabilities and contrast mechanisms for all three detectors are discussed quantitatively in direct comparison to each other and the conventional Everhart–Thornley detector.

This paper deals with the contribution of secondary electron emission, produced during the slowing down of fast electrons, on the intensity and temporal shape of the generated Kα pulse. The problem is treated in a general manner emphasizing laser–plasma interactions, where it was suggested in the literature that these electrons could play an important role on the temporal duration. Here, we make use of a hybrid model which includes secondary emission in conjunction with the continuous slowing down approximation (CSDA). The results are compared with those obtained from a simple CSDA calculation, with no detailed accounting of secondary emission and without straggling. Secondary electrons were calculated to contribute up to an additional 20% to the total Kα yield and in the case of monoenergetic electron beams in thick targets also to influence the temporal shape. The pulse duration is not affected in a significant manner by the secondary electrons.

The charging effects of microfibrils of sciatic nerve tissues due to electron irradiation are investigated using electron holography. The phenomenon that the charging effects are enhanced with an increase of electron intensity is visualized through direct observations of the electric potential distribution around the specimen. The electric potential at the surface of the specimen could be quantitatively evaluated by simulation, which takes into account the reference wave modulation due to the long-range electric field.

Because the ability to perform some form of chemical microanalysis has become an essential feature for any microscope, it is necessary to investigate what options are available in the new “ORION” helium ion microscope (HIM). The HIM has the ability to visualize local variations in specimen chemistry in both the ion induced secondary electron and the Rutherford backscattered imaging modes, but this provides only limited and qualitative information. Quantitative, elementally specific, microanalysis could be performed in the HIM using secondary electron spectroscopy, Rutherford backscattered ion spectroscopy, or secondary ion mass spectroscopy, but while each of these options has promise, none of them can presently guarantee either reliable element identification or quantitative analysis across the periodic table.

Lead cut-outs used to shape fields in kilovoltage radiotherapy can increase the surface dose on the patient. The physical processes leading to increased surface doses are summarised, and an empirical investigation of the efficacy of various coatings in reducing the skin dose generated by secondary electrons released in the lead during irradiation is presented, based on measurements using a thin window parallel plate ionisation chamber in 135 kVp and 225 kVp beams from a Pantak DXT-300 kilovoltage therapy unit. A new flexible coating for lead cut-outs has been formulated and tested. This coating, which is a combination of Copydex and emulsion paint, has been shown to be effective in reducing the skin dose generated by secondary electrons released in the lead during irradiation. The coating is easy to clean, and its inherent elasticity prevents cracking of the coating in clinical use. Its only disadvantage is that rough handling, or contact with sharp objects, can peel the coating at the point of contact.

The secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fermi level. Additional SE contrast mechanisms are discussed in relation to the dopant regions themselves as well as the AlGaAs window at the p-region. A novel method of in situ observation of the SE profile changes resulting from reverse biasing these structures shows that the built-in potential may be deduced. The obtained value of 0.7 eV is lower than the conventional bulk value due to surface effects.

Platinum nanoparticles finely dispersed in activated carbon powders have been observed with high contrast in secondary electron (SE) and backscattered electron (BE) images. The factors that contribute to the visibility of small metal particles in high-resolution BE and SE images are discussed. Monte Carlo simulations provided insight into the scattering of electrons by small, heavy-element particles located on, or embedded in, light-element supports. The visibility of Pt nanoparticles in BE images depends on many factors including the size and the location of the Pt particles, the energy of the incident electrons, and the size of the electron probe. The SE signals generated by backscattered electrons may not significantly contribute to the visibility of small Pt particles in high-resolution SE images of carbon supported Pt catalysts. Only those small Pt particles that are located on or very close to the surface of the carbon support can be revealed in high-resolution SE images.

Specimens that charge under electron beam irradiation in the scanning electron microscope (SEM) can be stabilized by choosing the beam energy to be such a value that the sum of the secondary and backscatter electron yields is unity, as this establishes a dynamic charge balance. We show here that for pure elements, the energies El and E2, for which charge balance occurs, are related directly to the atomic number of the material. Although generally there is no comparable relation for compounds, we also show that for polymers, the E2 energy is related both to the ratio of the number of valence electrons to molecular weight and to the electro-negativity of the monomer units that form the polymer.