Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is an emerging nonvolatile memory that uses magnetic tunnel junctions (MTJs) to store information. MTJs with a crystalline MgO(001) tunnel barrier sandwiched between ferromagnetic layers, such as CoFeB, exhibit giant tunnel magnetoresistance, which is used to readout the STT-MRAM. Writing of STT-MRAM is based on current-induced magnetization reversal, called STT switching. STT-MRAM with perpendicular magnetization is especially important for high-density and low-power-consuming memory applications such as embedded memory for large-scale integrated circuit. For STT-MRAM to replace ultrahigh-density dynamic random-access memory, however, there are still technological challenges concerning the materials and fabrication processes of MTJs. This article reviews the physics and materials science of MTJs for STT-MRAM. We also discuss the importance of new MTJ materials and processes for next-generation ultrahigh-density MRAM.

Materials chemistry was in its infancy when I started my independent research efforts in India after returning from the United States in the late 1950s. I have investigated phase transformations of TiO2 and CsCl, and also carried out defect calculations. While working on rare-earth oxides, I made TbO2 and PrO2 by a simple solution route; this is probably an early example of chimie douce (soft chemistry). I started working on transition-metal oxides by building simple instruments, including a thermobalance and furnaces. In 1987, we were able to fully characterize the first liquid N2 superconductor (YBa2Cu3O7) using a home-built AC susceptometer. Oxides have been of great interest to me because of the variety of phenomena exhibited by them. I have studied various aspects of transition-metal oxides, including metal-insulator transitions, colossal magnetoresistance, and multiferroics. The last two decades have included research on synthesis, characterization, and properties of various nanomaterials, and in particular, two-dimensional nanosheets (graphene and its inorganic analogues). Two-dimensional sheets and other nanomaterials have been covalently cross-linked to derive new materials with novel properties. Work on water splitting and reduction of CO2, besides using aliovalent anion substitution to generate novel inorganics (Zn2NF in place of ZnO), has also been conducted.

This article reviews progress in magnetoresistive (MR) read sensor technology for hard-disk drives (HDDs). MR reader technology has progressed from the anisotropic magnetoresistance sensor, to the current-in-plane giant magnetoresistive (CIP-GMR) sensor, to today’s current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) sensor. This evolution has driven the continuous growth of the areal density of HDDs from 2 Gbpsi (gigabits/in2) in early longitudinal recording to ∼1 Tbpsi (terabits/in2) currently in perpendicular magnetic recording. For further increases in the areal density, a transition to energy-assisted recording is expected in the near future. Further technical challenges for the read sensor technology toward 2 Tbpsi and then 5 Tbpsi areal densities are discussed based on recent promising experimental work on CPP-GMR using Heusler alloys, and CPP-GMR’s laterally expanded version, the lateral spin valve (LSV). To realize large MR output and narrow shield-to-shield spacing requirements for higher density recording, materials selection and optimization of interface structures of CPP-GMR and LSV devices are critical.

High pressure is a fascinating tool to promote and enhance the properties of materials as well as to induce new and exotic phenomena. This is especially of interest for functional materials, which are very sensitive to external pressure (P) and whose features can be tuned and controlled in a rigorous fashion. Through specific examples of the role of applied P on two families of functional compounds based on the perovskite lattice, manganites, and organic–inorganic hybrid perovskites, it is shown that the particular properties of interest can be manipulated by means of pressure. Examples highlight the effects at both the microscopic and macroscopic level, and show how the understanding of P-induced phenomena is essential for the development of materials chemistry design.

The possible use of spin and magnets in place of charge and capacitors, respectively, to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

Microwave-induced zero-resistance states appear when the associated B-1-periodic magnetoresistance oscillations grow in amplitude and become comparable to the dark resistance of the two-dimensional electron system (2DES). Existing theories have made differing predictions regarding the influence of the microwave polarization in this phenomenon. We have investigated the effect of rotating, in-situ, the polarization of linearly polarized microwaves relative to long-axis of Hall bars. The results indicate that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwave electric field and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance Rxx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. Interestingly, the phase shift θ0 for maximal oscillatory Rxx response under photoexcitation is a strong function of the magnetic field, the extremum in question, and the magnetic field orientation.

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions has aroused considerable interest and development. In parallel with this endeavor, recent advances in thin-film ferroelectrics have demonstrated the possibility of achieving stable and switchable ferroelectric polarization in nanometer-thick films. This discovery opened the possibility of using thin-film ferroelectrics as barriers in magnetic tunnel junctions, thus merging the fields of magnetism, ferroelectricity, and spin-polarized transport into an exciting and promising area of novel research. Nowadays, this research has become an important constituent of a broader effort in multiferroic materials and heterostructures that involves rich fundamental science and offers a potential for applications in novel multifunctional devices. The purpose of this article is to review recent developments in ferroelectric and multiferroic tunnel junctions. Starting from the concept of electron tunneling, we first discuss the key properties of magnetic tunnel junctions and then assess key functional characteristics of ferroelectric and multiferroic tunnel junctions. We discuss the recent demonstrations of giant resistive switching observed in ferroelectric tunnel junctions and the new concept of electrically controlling the spin polarization in magnetic tunnel junctions with a ferroelectric tunnel barrier.

This article gives a brief comparative overview of the upper critical fields Hc2(T)—the magnetic fields above which superconductivity disappears—of MgB2- and Fe-based superconductors. We discuss manifestations of multiband superconductivity, Pauli pair-breaking, and pairing symmetry in the shapes of Hc2(T) curves, and the ways of tuning Hc2(T) by doping and by impurity scattering. We show that the effective route to high Hc2 is by disordering in MgB2 and by doping-assisted tuning of the Fermi surface in Fe-based superconductors. These effects allow extremely high Hc2 values in both material classes that well exceed those found in Nb-based superconductors, opening up new opportunities for high-field applications.

Magnetic recording has progressed dramatically over the last 50 years, with an increase of almost eight orders of magnitude in the amount of information stored per unit area of disk space.Two key enablers of this progress have been the recording medium and the read-back head.This article reviews the current state of the art in multilayer thin-film longitudinal recording media and giant magnetoresistive (GMR) read heads, with particular emphasis on the nanostructured magnetic materials that are key to today's high-performance hard disk drives.

From its inception until today, and for the foreseeable future, magnetic data storage on disks and tape has provided constantly increased storage density.This has required not only constant innovation, but also major breakthroughs in magnetic materials, both for the media and the read head. Today's disk and tape drives take advantage of novel nanoengineered composite magnetic materials and quantum mechanical processes.In this issue of MRS Bulletin, we present a number of review articles by some of the leaders in this rapidly moving field that highlight the key materials science accomplishments that have enabled the tremendous progress in hard disk drive and magnetic tape technologies.Individual articles describe the materials involved in state-of-the-art magnetic recording, advanced media for perpendicular magnetic recording, the materials challenges of achieving high performance in flexible media such as magnetic tape, the materials issues of read heads, and future avenues for magnetic storage beyond magnetic recording, such as nanowires and spintronics.

A new member of the LnMIn5 family, ErCoIn5, has been synthesized by a flux-growth method. The structure of ErCoIn5 was determined by single crystal X-ray diffraction. It crystallizes in the tetragonal space group P4/mmm, Z = 1, with lattice parameters a = 4.5400(4) and c = 7.3970(7) Å, and V = 152.46(2) Å3. Electrical resistivity data show metallic behavior. Magnetic susceptibility measurements show this compound to be antiferromagnetic with TN = 5.1 K. We compare these experimental results with those of LaCoIn5 in an effort to better understand the effect of the structural trends observed on the transport and magnetic properties.