1 results
Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e27
- Print publication:
- 1996
-
- Article
-
- You have access
- HTML
- Export citation