The etching process of the 6H–SiC(000-1) surface was investigated to obtain a flat surface by removing scratches due to polishing. An atomically flat surface with a step-terrace structure without scratches has been obtained by removing the graphite layer grown on the substrate after annealing in N2 at a temperature of 1900 °C for 6 h. The step height corresponds to that of a 6H–SiC unit cell. In contrast, a rough surface was observed on the Si face, 6H–SiC (0001), using the same process as for the C face.