3 results
Current Transient Study of RF GaN HEMTs Biased at Quiescent Point of VDS = 28 V and ID = 100 mA/mm under Different Temperatures
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- Journal:
- MRS Advances / Volume 4 / Issue 9 / 2019
- Published online by Cambridge University Press:
- 06 March 2019, pp. 575-580
- Print publication:
- 2019
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- Article
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AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer
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- Journal:
- MRS Advances / Volume 3 / Issue 3 / 2018
- Published online by Cambridge University Press:
- 28 December 2017, pp. 143-146
- Print publication:
- 2018
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- Article
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AlGaN/GaN HEMTs with 2DHG Back Gate Control
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- Journal:
- MRS Advances / Volume 3 / Issue 3 / 2018
- Published online by Cambridge University Press:
- 26 December 2017, pp. 137-141
- Print publication:
- 2018
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- Article
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