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Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.25
- Print publication:
- 2004
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Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y6.10
- Print publication:
- 2003
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Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 596 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 563
- Print publication:
- 1999
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Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e12
- Print publication:
- 1998
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- Article
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