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Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants
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- Journal:
- MRS Online Proceedings Library Archive / Volume 128 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 557
- Print publication:
- 1988
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- Article
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