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12 - Gate metals
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Part II - Characterization techniques
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14 - MOS systems on high-mobility channel materials
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1 - Introduction
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Index
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5 - Carrier capture at bulk oxide traps
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Preface
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13 - Transmission probabilities and current leakage in gate oxides
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11 - MOS systems with high-k dielectrics
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Frontmatter
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10 - MOS systems with silicon dioxide dielectrics
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Contents
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Part I - Basic properties
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3 - Basic properties of the gate stack
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4 - Electron states at MOS interfaces
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7 - Electrical characterization by thermal activation
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8 - Characterization of oxide/silicon energy band alignment: internal photoemission and X-ray photoelectron spectroscopy
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2 - Basic properties of the MOS system
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The MOS System
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9 - Electron spin-based methods
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