16 results
Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T5.2.1
- Print publication:
- 2000
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AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G10.9
- Print publication:
- 2000
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Degradation of Luminescence from GaN During Electron Bombardment: Effects of Beam Voltage, Current and Scanned Area
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G6.27
- Print publication:
- 2000
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Temperature Dependence of Bound Exciton Emissions in GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 733-738
- Print publication:
- 1999
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Temperature Dependence of Bound Exciton Emissions in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.47
- Print publication:
- 1998
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High Pressure Study of III-Nitrides and Related Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 499 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 361
- Print publication:
- 1997
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Breakdown Behavior of Aigan Msm uv Photodetectors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1131
- Print publication:
- 1997
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Dielectrics for GaN Based MIS-Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 443
- Print publication:
- 1997
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Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 573
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- 1997
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The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e24
- Print publication:
- 1996
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Thermomodulated Reflectivity Spectra of Gan/Sapphire Epilayer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 741
- Print publication:
- 1996
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Optical Studies of MOCVD InxGa1-xN Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 823
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- 1996
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The Role of Impurities in LP-MOCVD Grown Gallium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 521
- Print publication:
- 1995
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Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 369
- Print publication:
- 1995
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