Electron tomography is a well-established technique for
three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices.