6 results
Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1194 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1194-A09-01
- Print publication:
- 2009
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The Oxide/Nitride Interface: a study for gate dielectrics and field passivation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E8.5
- Print publication:
- 2003
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Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.3.1
- Print publication:
- 2000
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Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 183
- Print publication:
- 1999
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MBE Growth of Oxides for III–N MOSFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 247
- Print publication:
- 1999
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Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 259
- Print publication:
- 1999
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