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Stacking faults in heavily nitrogen doped 4H-SiC
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 243-246
- Print publication:
- July 2004
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Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H1.8
- Print publication:
- 2000
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