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50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1282 / 2011
- Published online by Cambridge University Press:
- 09 March 2011, mrsf10-1282-a16-01
- Print publication:
- 2011
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- Article
- Export citation