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A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 µm AlGaN/GaN HEMT technologies
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 11 / Issue 5-6 / June 2019
- Published online by Cambridge University Press:
- 25 March 2019, pp. 456-465
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- Article
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