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Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 163
- Print publication:
- 1996
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- Article
- Export citation