1/f noise in semiconductor devices and circuits provides important information regarding quality of the interface as well as the transport mechanism. In 1D and 2D channel materials, 1/f noise also provides information on stability under ambient conditions, including effects of contaminants adsorbed on the surface. In addition, noise levels are important in evaluating suitability of the device for analog and digital applications. In this work, we have fabricated back-gated field-effect transistors (FETs) using various thicknesses of mechanically exfoliated MoS2 flakes (bilayer and 15 layer flakes) and studied the 1/f noise under ambient conditions. The on-current of the devices scales with the number of layers. The Hooge parameters inferred from the measured noise amplitudes and calculated carrier densities are comparable to prior reports on devices such as CNTs and graphene FETs, even when measured under ambient conditions. The effect of channel and contacts on both the conductance and noise can be inferred from bias-dependent current and noise measurements.

We have made a density functional study of the structural and electronic properties of B or N (individual) doped and BN co-doped graphene. The effect of doping has been studied by incorporating the doping concentration amount varying from 2% (one atom of the dopant in 50 host atoms) to 12 % atomic concentration in case of individual doping and from 4% (2 atoms of the dopant in 50 host atoms) to 24 % in case of co-doping, at the same time, altering different doping sites for the same concentration of substitutional doping. We made use of VASP (Vienna Ab-Initio Simulation Package) software based on density functional theory to perform all calculations. While the resulting geometries do not show much of distortion on doping, the electronic properties show a transition from semimetal to semiconductor with increasing number of dopants. The study shows that the BN doping introduces the band gap at the Fermi level unlike individual B and N doping which causes the shifting of Fermi level above or below the Dirac point. It is observed that not only concentration but position of B and N atoms in the hetero-structure also affects the value of band gap introduced.

The dynamics of one atom thick h-BN suspended nanoribbons have been obtained by first performing ab-initio calculations of the deformation potential energy and then solving numerically a Langevine type equation to explore their use as energy harvesting devices. Similarly to our previous proposal for a graphene-based harvester1, an applied compressive strain is used to drive the clamped-clamped nanoribbon structure into a bistable regime, where quasi-harmonic vibrations are combined with low frequency swings between the minima of a double-well potential. h-BN, graphene and MoS2 similar structures have been compared in terms of the static response to a compressive strain and of the dynamic evolution induced by an external noisy vibration. Due to its intrinsic piezoelectric response, the mechanical harvester naturally provides an electrical power that is readily available or can be stored by simply contacting the monolayer at its ends. Engineering the induced non-linearity, the proposed device is predicted to harvest an electrical root mean square (rms) power of more than 180 fW when it is excited by a noisy external force characterized by a white Gaussian frequency distribution with an intensity in the order of Frms=5pN.