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ZnO nanostructures epitaxially grown on ZnO seeded Si (100) substrates by chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Zhuo Chen ,
Tom Salagaj ,
Christopher Jensen  and
Kai Shum
Zhuo Chen
Affiliation:
[email protected], brooklyn college, brooklyn, New York, United States
Tom Salagaj
Affiliation:
[email protected], CVD Equipment Corp, Ronkonkoma, New York, United States
Christopher Jensen
Affiliation:
[email protected], CVD Equipment Corp, Ronkonkoma, New York, United States
Kai Shum
Affiliation:
[email protected], Brooklyn College, Physics, 2900 Bedford Ave, Brooklyn, New York, 11210, United States
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Abstract

ZnO nanostructures such as nanowire-networks and vertical nanorods were epitaxially grown on pre-seeded Si (100) substrates by chemical vapor deposition (CVD) method with a solid source. Crystalline ZnO seeds were prepared and controlled by the rapid thermal annealing (RTA) treatment of e-beam deposited amorphous ZnO thin films. Both epitaxially grown ZnO nanostructures and pre-deposited ZnO seeds were characterized by scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy. Excellent optical characteristics of these nanostructures such as PL line width, linearity of PL intensity as a function of excitation power density were obtained.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA06-21
Copyright
Copyright © Materials Research Society 2009

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References

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